फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
HERA806GDIODE GEN PURP 8A 600V TO220AC Taiwan Semiconductor Corporation |
3,323 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 55pF @ 4V, 1MHz | 80 ns | 10 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 150°C | 1.7 V @ 8 A | ||
![]() |
SR803HDIODE SCHOTTKY 8A 30V DO-201AD Taiwan Semiconductor Corporation |
3,477 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 8A (DC) | -55°C ~ 125°C | 550 mV @ 8 A | |
![]() |
SRA20100HDIODE SCHOTTKY 100V 20A TO220AC Taiwan Semiconductor Corporation |
2,161 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 20A (DC) | -55°C ~ 150°C | 920 mV @ 20 A | |
![]() |
FR152GDIODE FAST REC 1.5A 100V DO-15 Taiwan Semiconductor Corporation |
3,766 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1.5A (DC) | -55°C ~ 150°C | 1.3 V @ 1.5 A | ||
![]() |
SRA2040DIODE SCHOTTKY 40V 20A TO220AC Taiwan Semiconductor Corporation |
2,112 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 20A (DC) | -55°C ~ 125°C | 550 mV @ 20 A | ||
![]() |
MBR1635DIODE SCHOTTKY 35V 16A TO220 Taiwan Semiconductor Corporation |
2,235 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 35 V | 35 V | 16A (DC) | -55°C ~ 150°C | 630 mV @ 16 A | ||
![]() |
HERAF1604GDIODE GEN PURP 16A 300V IT0-220A Taiwan Semiconductor Corporation |
3,456 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 16A (DC) | -55°C ~ 150°C | 1 V @ 16 A | ||
![]() |
MBR1660DIODE SCHOTTKY 60V 16A TO220 Taiwan Semiconductor Corporation |
3,545 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 16A (DC) | -55°C ~ 150°C | 750 mV @ 16 A | ||
![]() |
UGF10JDIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation |
2,245 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 150°C | 2 V @ 10 A | ||
![]() |
SR1503HDIODE SCHOTTKY 15A 30V R-6 Taiwan Semiconductor Corporation |
2,761 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 15A (DC) | -55°C ~ 150°C | 550 mV @ 15 A | |
![]() |
SF32GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,259 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | ||
![]() |
SF63GHDIODE GEN PURP 6A 150V DO-201AD Taiwan Semiconductor Corporation |
2,066 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 6A (DC) | -55°C ~ 150°C | 975 mV @ 6 A | |
![]() |
SF63GDIODE GEN PURP 6A 150V DO-201AD Taiwan Semiconductor Corporation |
2,924 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 6A (DC) | -55°C ~ 150°C | 975 mV @ 6 A | ||
![]() |
HER201GDIODE GEN PURP 2A 50V DO-15 Taiwan Semiconductor Corporation |
2,953 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 2A (DC) | -55°C ~ 150°C | 1 V @ 2 A | ||
![]() |
SFAF1608GDIODE GEN PURP 600V 16A ITO220AC Taiwan Semiconductor Corporation |
3,791 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 16A (DC) | -55°C ~ 150°C | 1.7 V @ 16 A | ||
![]() |
FR151GDIODE FAST REC 1.5A 50V DO-15 Taiwan Semiconductor Corporation |
3,449 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A (DC) | -55°C ~ 150°C | 1.3 V @ 1.5 A | ||
![]() |
SR509DIODE SCHOTTKY 5A 90V DO-201AD Taiwan Semiconductor Corporation |
3,414 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 5A (DC) | -55°C ~ 150°C | 850 mV @ 5 A | ||
![]() |
SRAF1040DIODE SCHOTTKY 40V 10A ITO220AC Taiwan Semiconductor Corporation |
3,817 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 10A (DC) | -55°C ~ 125°C | 550 mV @ 10 A | ||
![]() |
UGA15120DIODE GEN PURP 15A TO220AC Taiwan Semiconductor Corporation |
3,808 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 5 µA @ 1200 V | 1200 V | 15A (DC) | -55°C ~ 175°C | 2.9 V @ 15 A | ||
![]() |
UF5JFCDIODE GEN PURP 600V 5A ITO220AC Taiwan Semiconductor Corporation |
2,001 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 25 ns | 30 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 150°C | 2.8 V @ 5 A |