फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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31DF6 B0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
2,736 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 20 µA @ 600 V | 600 V | 3A | -40°C ~ 150°C | 1.7 V @ 3 A | |
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SS315 R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,077 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | ||
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3A100 B0GDIODE GEN PURP 3A DO204AC Taiwan Semiconductor Corporation |
2,179 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 27pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
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S4A M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,663 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
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3A100HB0GDIODE GEN PURP 3A DO204AC Taiwan Semiconductor Corporation |
2,779 | - |
RFQ |
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Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
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ESH3C R7DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
3,906 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | ||
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3A60 B0GDIODE GEN PURP 600V 3A DO204AC Taiwan Semiconductor Corporation |
3,191 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 27pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
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S5A R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,237 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
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3A60HB0GDIODE GEN PURP 600V 3A DO204AC Taiwan Semiconductor Corporation |
3,612 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
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S5B R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,351 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
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6A05G B0GDIODE GEN PURP 50V 6A R-6 Taiwan Semiconductor Corporation |
3,916 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A | |
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SSL34 R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,530 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A (DC) | -55°C ~ 125°C | 410 mV @ 3 A | ||
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6A05GHB0GDIODE GEN PURP 50V 6A R-6 Taiwan Semiconductor Corporation |
3,901 | - |
RFQ |
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Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A |
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S4K R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,915 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 800 V | 800 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
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6A100G B0GDIODE GEN PURP 6A R-6 Taiwan Semiconductor Corporation |
2,871 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
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S3A R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,610 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | ||
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6A100GHB0GDIODE GEN PURP 6A R-6 Taiwan Semiconductor Corporation |
3,438 | - |
RFQ |
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Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
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SK56C R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,360 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 750 mV @ 5 A | ||
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6A10G B0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
3,484 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A | |
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ES3D R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,343 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |