फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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6A10GHB0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
3,260 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A |
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MUR360S M6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,272 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A | ||
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6A20G B0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
2,582 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
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S12MC M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,092 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 12A (DC) | -55°C ~ 150°C | 1.1 V @ 12 A | ||
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6A20GHB0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
3,715 | - |
RFQ |
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Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
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SK83C R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,299 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 8A (DC) | -55°C ~ 125°C | 550 mV @ 8 A | ||
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6A40G B0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
3,351 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
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RS3B R7DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,857 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 150 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
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6A40GHB0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
2,232 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
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HS5B R7DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,590 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 5A (DC) | -55°C ~ 150°C | 1 V @ 5 A | ||
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6A60G B0GDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
2,252 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
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S5D R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,490 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
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6A60GHB0GDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
2,694 | - |
RFQ |
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Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
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S3B M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,999 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | ||
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6A80G B0GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
2,913 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
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SK520C R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,567 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 950 mV @ 5 A | ||
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6A80GHB0GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
3,098 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
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SK510C R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,789 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | ||
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BA157G B0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,651 | - |
RFQ |
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Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
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S4J M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,886 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A |