फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MUR310S R7DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,830 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 875 mV @ 3 A | ||
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1N5821 B0GDIODE SCHOTTKY 30V 3A DO201AD Taiwan Semiconductor Corporation |
2,968 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
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HS5K R6GDIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,349 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 5A (DC) | -55°C ~ 150°C | 1.7 V @ 5 A | ||
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1N5821HB0GDIODE SCHOTTKY 30V 3A DO201AD Taiwan Semiconductor Corporation |
2,839 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A |
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S4A R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,147 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
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1N5822 B0GDIODE SCHOTTKY 40V 3A DO201AD Taiwan Semiconductor Corporation |
3,222 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 525 mV @ 3 A | |
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ES3C R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,666 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | ||
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SS33 M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,664 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | ||
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1N5822HB0GDIODE SCHOTTKY 40V 3A DO201AD Taiwan Semiconductor Corporation |
2,322 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 525 mV @ 3 A |
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RS3J R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,620 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 250 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
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2A01G B0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
2,132 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
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ES3D R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,800 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | ||
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2A01GHB0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
3,604 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
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S4M M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,622 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | 1000 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
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2A02G B0GDIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation |
3,297 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
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S12JC R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,617 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 12A (DC) | -55°C ~ 150°C | 1.1 V @ 12 A | ||
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2A02GHB0GDIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation |
2,196 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
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MUR305S R6DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,127 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | 875 mV @ 3 A | ||
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2A03G B0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,049 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
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HS3B R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,862 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |