फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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HS3K R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,571 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | ||
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1N4936G B0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,266 | - |
RFQ |
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Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
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SS34 R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,615 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | ||
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1N4936GHB0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,275 | - |
RFQ |
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Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
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SK82C R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,533 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 8A (DC) | -55°C ~ 125°C | 550 mV @ 8 A | ||
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1N4937G B0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,839 | - |
RFQ |
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Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
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ES3A R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,596 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | ||
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1N4937GHB0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,465 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
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SK59C R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,534 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 90 V | 90 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | ||
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1N5391G B0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,275 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
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ES3H R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,773 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | ||
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1N5391GHB0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,038 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A |
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S5G R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,875 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
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1N5392G B0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,258 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
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SK53C R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,667 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | ||
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1N5392GHB0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,560 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A |
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MUR420S R6GDIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,801 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 65pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 175°C | 875 mV @ 4 A | ||
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1N5393G B0GDIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,325 | - |
RFQ |
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Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
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MUR360S R6GDIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,222 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A | ||
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1N5393GHB0GDIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,132 | - |
RFQ |
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Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A |