और अधिक उत्पाद श्रेणियाँ

डायोड-रेक्टीफायर्स-सिंगल

निर्माता भाग संख्या	उपलब्धता	मूल्य	मात्रा	डेटाशीत	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SF2L4GHA0G DIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation	2,431	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	1 µA @ 200 V	200 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SF2L6G A0G DIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation	2,515	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	1 µA @ 400 V	400 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
SF2L6GHA0G DIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation	3,904	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	1 µA @ 400 V	400 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
SF2L8G A0G DIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation	3,550	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	1 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SF2L8GHA0G DIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation	2,320	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	1 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SF31G A0G DIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation	2,125	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF31GHA0G DIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation	3,501	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF32G A0G DIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation	3,387	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF32GHA0G DIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation	2,853	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF33G A0G DIODE GEN PURP 150V 3A DO201AD Taiwan Semiconductor Corporation	3,730	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF33GHA0G DIODE GEN PURP 150V 3A DO201AD Taiwan Semiconductor Corporation	3,183	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF34GHA0G DIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation	2,916	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF35G A0G DIODE GEN PURP 300V 3A DO201AD Taiwan Semiconductor Corporation	2,746	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
SF35GHA0G DIODE GEN PURP 300V 3A DO201AD Taiwan Semiconductor Corporation	3,943	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
SF36GHA0G DIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation	2,198	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
SF37G A0G DIODE GEN PURP 500V 3A DO201AD Taiwan Semiconductor Corporation	2,271	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	3A	-55°C ~ 150°C	1.7 V @ 3 A
SF37GHA0G DIODE GEN PURP 500V 3A DO201AD Taiwan Semiconductor Corporation	3,368	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	3A	-55°C ~ 150°C	1.7 V @ 3 A
SF38GHA0G DIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation	3,563	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	3A	-55°C ~ 150°C	1.7 V @ 3 A
SF41G A0G DIODE GEN PURP 50V 4A DO201AD Taiwan Semiconductor Corporation	3,374	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	4A	-55°C ~ 150°C	1 V @ 4 A
SF41GHA0G DIODE GEN PURP 50V 4A DO201AD Taiwan Semiconductor Corporation	2,049	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	4A	-55°C ~ 150°C	1 V @ 4 A