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निर्माता भाग संख्या	उपलब्धता	मूल्य	मात्रा	डेटाशीत	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
MUR4L40 A0G DIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation	3,697	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
MUR4L40HA0G DIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation	2,689	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
MUR4L60 A0G DIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation	3,821	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 600 V	600 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
MUR4L60HA0G DIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation	2,404	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 600 V	600 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
P2500M A0G DIODE GEN PURP 1000V 25A P2500 Taiwan Semiconductor Corporation	3,288	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	5 µA @ 1000 V	-	25A	-50°C ~ 175°C	870 mV @ 5 A
P2500MHA0G DIODE GEN PURP 25A P2500 Taiwan Semiconductor Corporation	2,829	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	5 µA @ 1000 V	-	25A	-50°C ~ 175°C	870 mV @ 5 A
SF21G A0G DIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation	2,160	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SF21GHA0G DIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation	3,575	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SF22G A0G DIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation	2,491	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SF22GHA0G DIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation	3,159	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SF23G A0G DIODE GEN PURP 150V 2A DO204AC Taiwan Semiconductor Corporation	3,607	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SF23GHA0G DIODE GEN PURP 150V 2A DO204AC Taiwan Semiconductor Corporation	2,091	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SF24GHA0G DIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation	3,262	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SF25G A0G DIODE GEN PURP 300V 2A DO204AC Taiwan Semiconductor Corporation	3,162	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
SF25GHA0G DIODE GEN PURP 300V 2A DO204AC Taiwan Semiconductor Corporation	2,725	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
SF26GHA0G DIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation	3,307	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
SF27G A0G DIODE GEN PURP 500V 2A DO204AC Taiwan Semiconductor Corporation	2,315	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SF27GHA0G DIODE GEN PURP 500V 2A DO204AC Taiwan Semiconductor Corporation	2,218	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SF28GHA0G DIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation	3,306	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SF2L4G A0G DIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation	2,852	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	1 µA @ 200 V	200 V	2A	-55°C ~ 150°C	950 mV @ 2 A