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निर्माता भाग संख्या	उपलब्धता	मूल्य	मात्रा	डेटाशीत	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
HER605G A0G DIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation	2,199	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	6A	-55°C ~ 150°C	1.3 V @ 6 A
HER606G A0G DIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation	3,991	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	6A	-55°C ~ 150°C	1.7 V @ 6 A
HT11G A0G DIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation	2,041	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A
HT12G A0G DIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation	2,866	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A
HT13G A0G DIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation	2,078	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	50 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1 V @ 1 A
HT14G A0G DIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation	3,687	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	50 ns	5 µA @ 300 V	300 V	1A	-55°C ~ 150°C	1 V @ 1 A
HT15G A0G DIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation	3,347	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
HT16G A0G DIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation	2,410	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	75 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
HT17G A0G DIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation	3,676	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	75 ns	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
HT18G A0G DIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation	2,159	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	-	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR160 A0G DIODE GEN PURP 600V 1A DO204AC Taiwan Semiconductor Corporation	3,929	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	27pF @ 4V, 1MHz	50 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.25 V @ 1 A
MUR160HA0G DIODE GEN PURP 600V 1A DO204AC Taiwan Semiconductor Corporation	3,217	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	27pF @ 4V, 1MHz	50 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.25 V @ 1 A
MUR190 A0G DIODE GEN PURP 900V 1A DO204AC Taiwan Semiconductor Corporation	3,772	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	75 ns	5 µA @ 900 V	900 V	1A	-55°C ~ 175°C	1.7 V @ 1 A
MUR190HA0G DIODE GEN PURP 900V 1A DO204AC Taiwan Semiconductor Corporation	2,711	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	75 ns	5 µA @ 900 V	900 V	1A	-55°C ~ 175°C	1.7 V @ 1 A
MUR420HA0G DIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation	3,553	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	25 ns	5 µA @ 200 V	200 V	4A	-55°C ~ 175°C	890 mV @ 4 A
MUR440 A0G DIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation	3,113	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
MUR440HA0G DIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation	3,164	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
MUR460HA0G DIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation	2,107	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 600 V	600 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
MUR4L20 A0G DIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation	3,557	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	25 ns	5 µA @ 200 V	200 V	4A	-55°C ~ 175°C	890 mV @ 4 A
MUR4L20HA0G DIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation	2,616	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	25 ns	5 µA @ 200 V	200 V	4A	-55°C ~ 175°C	890 mV @ 4 A