फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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MURF8L60DIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
2,943 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 5 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 1.3 V @ 8 A | ||
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SFT12GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,417 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 950 mV @ 1 A | ||
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HER202GDIODE GEN PURP 2A 100V DO-15 Taiwan Semiconductor Corporation |
2,435 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 2A (DC) | -55°C ~ 150°C | 1 V @ 2 A | ||
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SF61GDIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation |
3,505 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 6A (DC) | -55°C ~ 150°C | 975 mV @ 6 A | ||
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SR102DIODE SCHOTTKY 20V 1A DO-41 Taiwan Semiconductor Corporation |
2,684 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | ||
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SR103DIODE SCHOTTKY 30V 1A DO-41 Taiwan Semiconductor Corporation |
3,442 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | ||
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MBR1650DIODE SCHOTTKY 50V 16A TO220 Taiwan Semiconductor Corporation |
3,245 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 16A (DC) | -55°C ~ 150°C | 750 mV @ 16 A | ||
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SRA2040HDIODE SCHOTTKY 40V 20A TO220AC Taiwan Semiconductor Corporation |
2,683 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 20A (DC) | -55°C ~ 125°C | 550 mV @ 20 A | |
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SFAF2006GDIODE GEN PURP 400V 20A ITO220AC Taiwan Semiconductor Corporation |
3,766 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 20A (DC) | -55°C ~ 150°C | 1.3 V @ 20 A | ||
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1N5402GHDIODE GEN PURP 3A 200V DO-201AD Taiwan Semiconductor Corporation |
3,412 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 1 V @ 3 A | |
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SFAF1606GHDIODE GEN PURP 400V 16A ITO220AC Taiwan Semiconductor Corporation |
2,937 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 16A (DC) | -55°C ~ 150°C | 1.3 V @ 16 A | |
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MBR10150DIODE SCHOTTKY 10A 150V TO220AB Taiwan Semiconductor Corporation |
3,099 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A (DC) | -55°C ~ 150°C | 1.05 V @ 10 A | ||
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HERA807GDIODE GEN PURP 8A 800V TO220AC Taiwan Semiconductor Corporation |
2,444 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 55pF @ 4V, 1MHz | 80 ns | 10 µA @ 800 V | 800 V | 8A (DC) | -55°C ~ 150°C | 1.7 V @ 8 A | ||
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ESH1JMHRSGDIODE GEN PURP 600V 1A MICRO SMA Taiwan Semiconductor Corporation |
3,917 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | 3pF @ 4V, 1MHz | 25 ns | 1 µA @ 600 V | 600 V | 1A (DC) | -55°C ~ 150°C | 1.5 V @ 1 A | |
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ESH1GMHRSGDIODE GEN PURP 400V 1A MICRO SMA Taiwan Semiconductor Corporation |
2,569 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | 3pF @ 4V, 1MHz | 25 ns | 1 µA @ 400 V | 400 V | 1A (DC) | -55°C ~ 150°C | 1.5 V @ 1 A | |
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RS2BA R3GDIODE GEN PURP 100V 1.5A DO214AC Taiwan Semiconductor Corporation |
1,598 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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RS2JA R3GDIODE GEN PURP 600V 1.5A DO214AC Taiwan Semiconductor Corporation |
1,500 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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HS1JL RVGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,878 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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MUR360SBHR5GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
2,550 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A |
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RS1DFS MWGDIODE Taiwan Semiconductor Corporation |
10,388 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |