फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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1N914BW RHGDIODE GEN PURP 75V 150MA SOD123F Taiwan Semiconductor Corporation |
3,730 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 75 V | 150mA (DC) | -65°C ~ 150°C | 1 V @ 100 mA | |
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S15JLW RVGDIODE GEN PURP 600V 1.5A SOD123W Taiwan Semiconductor Corporation |
2,455 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1.5 A | |
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SR110HR0GDIODE SCHOTTKY 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,488 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A |
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S1KLSHRVGDIODE GEN PURP 800V 1.2A SOD123 Taiwan Semiconductor Corporation |
3,896 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 800 V | 800 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A | |
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2A05G A0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,766 | - |
RFQ |
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Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
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S1MLSHRVGDIODE GEN PURP 1KV 1.2A SOD123HE Taiwan Semiconductor Corporation |
3,218 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 1000 V | 1000 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A | |
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SR006 A0GDIODE SCHOTTKY 60V 500MA DO204AL Taiwan Semiconductor Corporation |
3,704 | - |
RFQ |
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Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA | |
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S2AADIODE GEN PURP 50V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,960 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | ||
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SF24GHR0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,843 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
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ES1JLHRVGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,328 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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SF25GHR0GDIODE GEN PURP 300V 2A DO204AC Taiwan Semiconductor Corporation |
3,819 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
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SF26GHR0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
2,183 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
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SR204HR0GDIODE SCHOTTKY 40V 2A DO204AC Taiwan Semiconductor Corporation |
2,513 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 2A | -55°C ~ 125°C | 550 mV @ 2 A |
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SR206HR0GDIODE SCHOTTKY 60V 2A DO204AC Taiwan Semiconductor Corporation |
3,658 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
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SK115BHM4GDIODE SCHOTTKY 150V 1A DO214AA Taiwan Semiconductor Corporation |
2,183 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 3 A |
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UF4006HR0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,398 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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S1BHM2GDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
3,535 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
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SK310BHM4GDIODE SCHOTTKY 100V 3A DO214AA Taiwan Semiconductor Corporation |
2,484 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
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SR210 R0GDIODE SCHOTTKY 100V 2A DO204AC Taiwan Semiconductor Corporation |
3,814 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
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UF4007HR0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,648 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |