फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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TSS70U RGGDIODE SCHOTTKY 70V 70MA 0603 Taiwan Semiconductor Corporation |
2,371 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 5 ns | 100 nA @ 25 V | 70 V | 70mA | -65°C ~ 125°C | 1 V @ 15 mA | |
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BYG21M M2GDIODE AVALANCHE 1.5A DO214AC Taiwan Semiconductor Corporation |
3,824 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 13pF @ 4V, 1MHz | 120 ns | 1 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A | |
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ES1LDHM2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
3,095 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
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ES1LGHM2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
3,696 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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ES1LJHM2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
2,882 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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S1DLS1.2A, 200V, STANDARD RECOVERY RE Taiwan Semiconductor Corporation |
3,699 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 200 V | 200 V | 1.2A | -55°C ~ 175°C | 1.3 V @ 1.2 A | |
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SF14G R0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,501 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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HS2KA M2GDIODE GEN PURP 800V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,844 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1.5 A | |
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HS2MA M2GDIODE GEN PURP 1.5A DO214AC Taiwan Semiconductor Corporation |
2,923 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1.7 V @ 1.5 A | |
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TSS0230LU RGGDIODE SCHOTTKY 35V 200MA 0603 Taiwan Semiconductor Corporation |
3,576 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | - | - | 30 µA @ 10 V | 35 V | 200mA | -40°C ~ 125°C | 500 mV @ 200 mA | |
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HER155G R0GDIODE GEN PURP 400V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,833 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
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HER156G R0GDIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,042 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
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SR204 R0GDIODE SCHOTTKY 40V 2A DO204AC Taiwan Semiconductor Corporation |
3,717 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 2A | -55°C ~ 125°C | 550 mV @ 2 A | |
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HER157G R0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,850 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
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1N914B A0GDIODE GEN PURP 100V 150MA DO35 Taiwan Semiconductor Corporation |
3,447 | - |
RFQ |
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Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 150mA | -65°C ~ 150°C | 720 mV @ 5 mA | |
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SR206 R0GDIODE SCHOTTKY 60V 2A DO204AC Taiwan Semiconductor Corporation |
2,095 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
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HER158G R0GDIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation |
2,782 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
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1N914BWS RRGDIODE GEN PURP 100V 150MA SOD323 Taiwan Semiconductor Corporation |
3,669 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 150mA | -65°C ~ 150°C | 1 V @ 100 mA | |
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RS1MLS RVGDIODE GEN PURP 1KV 1.2A SOD123HE Taiwan Semiconductor Corporation |
2,992 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 300 ns | 5 µA @ 1000 V | 1000 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A | |
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SR010HR0GDIODE SCHOTTKY 100V 500MA DO204 Taiwan Semiconductor Corporation |
2,960 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 850 mV @ 500 mA |