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| फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HT15G R0GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
2,001 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
HT16G R0GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
2,703 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
HT17G R0GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
3,670 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
HT18G R0GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
3,482 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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TSS40U RGGDIODE SCHOTTKY 40V 200MA 0603 Taiwan Semiconductor Corporation |
3,623 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | 5pF @ 0V, 1MHz | 5 ns | 200 nA @ 30 V | 40 V | 200mA | -65°C ~ 125°C | 1 V @ 40 mA | |
|
RS1JLSHRVGDIODE GEN PURP 600V 1.2A SOD123 Taiwan Semiconductor Corporation |
2,938 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 300 ns | 5 µA @ 600 V | 600 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A | |
|
|
RS1KLSHRVGDIODE GEN PURP 800V 1.2A SOD123 Taiwan Semiconductor Corporation |
2,728 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 300 ns | 5 µA @ 800 V | 800 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A | |
|
|
RS1MLSHRVGDIODE GEN PURP 1KV 1.2A SOD123HE Taiwan Semiconductor Corporation |
3,407 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 300 ns | 5 µA @ 1000 V | 1000 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A | |
|
|
SS12LS RVGDIODE SCHOTTKY 20V 1A SOD123HE Taiwan Semiconductor Corporation |
2,715 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A | |
|
SK215A M2GDIODE SCHOTTKY 150V 2A DO214AC Taiwan Semiconductor Corporation |
3,017 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SS13LS RVGDIODE SCHOTTKY 30V 1A SOD123HE Taiwan Semiconductor Corporation |
3,938 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 400 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
SS14LW RVGDIODE SCHOTTKY 40V 1A SOD123W Taiwan Semiconductor Corporation |
2,335 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 550 mV @ 1 A | |
|
|
SS15 M2GDIODE SCHOTTKY 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,166 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 200 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 750 mV @ 1 A | |
|
|
RS2KAHM2GDIODE GEN PURP 800V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,699 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
|
RS2MAHM2GDIODE GEN PURP 1.5A DO214AC Taiwan Semiconductor Corporation |
2,525 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
|
RS2DAHM2GDIODE GEN PURP 200V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,401 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
LL4448 L0GDIODE GP 75V 150MA MINIMELF Taiwan Semiconductor Corporation |
2,984 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 75 V | 150mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
|
RS2GAHM2GDIODE GEN PURP 400V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,495 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
|
RS2JAHM2GDIODE GEN PURP 600V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,880 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
1N4005GHA0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,180 | - |
RFQ |
डेटाशीत |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
- 1500+ दैनिक औसत RFQ
- 20,000.000 मानक उत्पाद इकाई
- 1800+ विश्वभर के निर्माता
- 15,000+ स्टॉक वेयरहाउस
