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डायोड-रेक्टीफायर्स-सिंगल
| फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S1JB M4GDIODE GEN PURP 600V 1A DO214AA Taiwan Semiconductor Corporation |
3,581 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
S1KB M4GDIODE GEN PURP 800V 1A DO214AA Taiwan Semiconductor Corporation |
2,606 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
1N4002G A0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,301 | - |
RFQ |
डेटाशीत |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
S1MB M4GDIODE GEN PURP 1000V 1A DO214AA Taiwan Semiconductor Corporation |
3,684 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
ES1FHM2GDIODE GEN PURP 300V 1A DO214AC Taiwan Semiconductor Corporation |
3,454 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
ES1GHM2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
2,451 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
F1T4GHR0GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
2,439 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
F1T5GHR0GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
3,945 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
ES1JHM2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
3,036 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
SRT110HR0GDIODE SCHOTTKY 100V 1A TS-1 Taiwan Semiconductor Corporation |
2,547 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
|
1N5817HR0GDIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation |
2,852 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A |
|
|
1N5818HR0GDIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation |
3,939 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
|
1N5819HR0GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
3,548 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 600 mV @ 1 A |
|
|
SR104HR0GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
3,430 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
|
SFT14GHR0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
3,117 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
UG06AHR0GDIODE GEN PURP 50V 600MA TS-1 Taiwan Semiconductor Corporation |
3,471 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 50 V | 50 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA |
|
|
UG06BHR0GDIODE GEN PURP 100V 600MA TS-1 Taiwan Semiconductor Corporation |
2,050 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 100 V | 100 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA |
|
|
UG06CHR0GDIODE GEN PURP 150V 600MA TS-1 Taiwan Semiconductor Corporation |
3,860 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 150 V | 150 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA |
|
|
UG06DHR0GDIODE GEN PURP 200V 600MA TS-1 Taiwan Semiconductor Corporation |
3,858 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 200 V | 200 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA |
|
|
HT14G R0GDIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation |
3,577 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
- 1500+ दैनिक औसत RFQ
- 20,000.000 मानक उत्पाद इकाई
- 1800+ विश्वभर के निर्माता
- 15,000+ स्टॉक वेयरहाउस
