फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK090A65Z,S4XMOSFET N-CH 650V 30A TO220SIS Toshiba Semiconductor and Storage |
2,537 | - |
RFQ |
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Tube | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
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SSM6K411TU(TE85L,FMOSFET N-CH 20V 10A UF6 Toshiba Semiconductor and Storage |
2,560 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta) | 2.5V, 4.5V | 12mOhm @ 7A, 4.5V | 1.2V @ 1mA | 9.4 nC @ 4.5 V | ±12V | 710 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
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SSM3K37CT,L3FMOSFET N-CH 20V 200MA CST3 Toshiba Semiconductor and Storage |
2,954 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12 pF @ 10 V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM3J15CT,L3FSMALL LOW RON PCH MOSFETS VDSS:- Toshiba Semiconductor and Storage |
2,727 | - |
RFQ |
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Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | ±20V | 9.1 pF @ 3 V | - | 100mW (Ta) | 150°C | Surface Mount |
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SSM3K16CTC,L3FMOSFET N-CH 20V 200MA CST3C Toshiba Semiconductor and Storage |
3,853 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12 pF @ 10 V | - | 500mW (Ta) | 150°C | Surface Mount |
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SSM3K16FS,LFSMALL LOW ON RESISTANCE NCH MOSF Toshiba Semiconductor and Storage |
3,138 | - |
RFQ |
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Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 9.3 pF @ 3 V | - | 100mW (Ta) | 150°C | Surface Mount |
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SSM3K16CT(TPL3)MOSFET N-CH 20V 100MA CST3 Toshiba Semiconductor and Storage |
3,910 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | π-MOSVI | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 9.3 pF @ 3 V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM3J66MFV,L3FMOSFET P-CH 20V 800MA VESM Toshiba Semiconductor and Storage |
3,650 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.2V, 4.5V | 390mOhm @ 800mA, 4.5V | 1V @ 1mA | 1.6 nC @ 4.5 V | +6V, -8V | 100 pF @ 10 V | - | 150mW (Ta) | 150°C | Surface Mount |
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SSM3K15ACT(TPL3)MOSFET N-CH 30V 100MA CST3 Toshiba Semiconductor and Storage |
2,568 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5 pF @ 3 V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM3J16FU(TE85L,F)SMALL LOW RON PCH MOSFETS VDSS:- Toshiba Semiconductor and Storage |
2,878 | - |
RFQ |
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Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 8Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 11 pF @ 3 V | - | 150mW (Ta) | 150°C | Surface Mount |
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SSM5N15FE(TE85L,F)MOSFET N-CH 30V 100MA ESV Toshiba Semiconductor and Storage |
2,068 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | π-MOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8 pF @ 3 V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM5N15FU,LFMOSFET N-CH 30V 100MA USV Toshiba Semiconductor and Storage |
3,284 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | π-MOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | - | - | ±20V | 7.8 pF @ 3 V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM3J09FU,LFMOSFET P-CH 30V 200MA USM Toshiba Semiconductor and Storage |
15,317 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 200mA (Ta) | 3.3V, 10V | 2.7Ohm @ 100mA, 10V | 1.8V @ 100µA | - | ±20V | 22 pF @ 5 V | - | 150mW (Ta) | 150°C | Surface Mount |
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SSM3K17SU,LF(DMOSFET N-CH 50V 100MA USM Toshiba Semiconductor and Storage |
2,330 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | 100mA (Ta) | - | - | - | - | - | - | - | - | - | - | |
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SSM3J112TU,LFMOSFET P-CH 30V 1.1A UFM Toshiba Semiconductor and Storage |
2,335 | - |
RFQ |
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Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.1A (Ta) | 4V, 10V | 390mOhm @ 500mA, 10V | 1.8V @ 100µA | - | ±20V | 86 pF @ 15 V | - | 800mW (Ta) | 150°C | Surface Mount |
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SSM6J422TU,LFMOSFET P-CH 20V 4A UF6 Toshiba Semiconductor and Storage |
3,917 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 42.7mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | +6V, -8V | 840 pF @ 10 V | - | 1W (Ta) | 150°C | Surface Mount |
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SSM5H90ATU,LFMOSFET N-CH 20V 2.4A UFV Toshiba Semiconductor and Storage |
2,004 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | 2.5V, 4V | 65mOhm @ 1.5A, 4V | 1.2V @ 1mA | 2.2 nC @ 4 V | ±10V | 200 pF @ 10 V | - | 500mW (Ta) | 150°C | Surface Mount |
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SSM3J118TU,LFPB-F SMALL LOW ON RESISTANCE PCH Toshiba Semiconductor and Storage |
3,525 | - |
RFQ |
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Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 650mA, 10V | 2.6V @ 1mA | - | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | 150°C | Surface Mount |
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2SJ305TE85LFMOSFET P-CH 30V 200MA SC59 Toshiba Semiconductor and Storage |
13,746 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 200mA (Ta) | 2.5V | 4Ohm @ 50mA, 2.5V | - | - | ±20V | 92 pF @ 3 V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM6G18NU,LFMOSFET P-CH 20V 2A 6UDFN Toshiba Semiconductor and Storage |
2,418 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 112mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | ±8V | 270 pF @ 10 V | Schottky Diode (Isolated) | 1W (Ta) | 150°C (TJ) | Surface Mount |