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ट्रांजिस्टर - FETs, MOSFETs - सिंगल
| फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK3R2A08QM,S4XUMOS10 TO-220SIS 80V 3.2MOHM Toshiba Semiconductor and Storage |
2,904 | - |
RFQ |
डेटाशीत |
Tube | U-MOSX-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 92A (Tc) | 6V, 10V | 3.2mOhm @ 46A, 10V | 3.5V @ 1.3mA | 102 nC @ 10 V | ±20V | 7670 pF @ 40 V | - | 45W (Tc) | 175°C | Through Hole |
|
XK1R9F10QB,LXGQMOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage |
4,952 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSX-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Ta) | 6V, 10V | 1.92mOhm @ 80A, 10V | 3.5V @ 1mA | 184 nC @ 10 V | ±20V | 11500 pF @ 10 V | - | 375W (Tc) | 175°C | Surface Mount |
|
SSM3K341R,LXHFAECQ MOSFET NCH 60V 6A SOT23F Toshiba Semiconductor and Storage |
3,790 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 36mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | ±20V | 550 pF @ 10 V | - | 1.2W (Ta) | 175°C | Surface Mount |
|
TK2R4E08QM,S1XUMOS10 TO-220AB 80V 2.4MOHM Toshiba Semiconductor and Storage |
2,208 | - |
RFQ |
डेटाशीत |
Tube | U-MOSX-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 2.44mOhm @ 50A, 10V | 3.5V @ 2.2mA | 178 nC @ 10 V | ±20V | 13000 pF @ 40 V | - | 300W (Tc) | 175°C | Through Hole |
|
TK6R7P06PL,RQMOSFET N-CHANNEL 60V 46A DPAK Toshiba Semiconductor and Storage |
2,459 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 46A (Tc) | 4.5V, 10V | 6.7mOhm @ 23A, 10V | 2.5V @ 300µA | 26 nC @ 10 V | ±20V | 1990 pF @ 30 V | - | 66W (Tc) | 175°C | Surface Mount |
|
TPCA8052-H(T2L1,VMMOSFET N-CH 40V 20A 8SOP Toshiba Semiconductor and Storage |
9,995 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta) | 4.5V, 10V | 11.3mOhm @ 10A, 10V | 2.3V @ 200µA | 25 nC @ 10 V | ±20V | 2110 pF @ 10 V | - | 1.6W (Ta), 30W (Tc) | 150°C | Surface Mount |
|
|
TK3R1P04PL,RQMOSFET N-CHANNEL 40V 58A DPAK Toshiba Semiconductor and Storage |
19,509 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 58A (Tc) | 4.5V, 10V | 3.1mOhm @ 29A, 10V | 2.4V @ 500µA | 60 nC @ 10 V | ±20V | 4670 pF @ 20 V | - | 87W (Tc) | 175°C | Surface Mount |
|
TK14C65W,S1QMOSFET N-CH 650V 13.7A I2PAK Toshiba Semiconductor and Storage |
3,993 | - |
RFQ |
डेटाशीत |
Tube | DTMOSIV | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | Through Hole |
|
|
TK14C65W5,S1QMOSFET N-CH 650V 13.7A I2PAK Toshiba Semiconductor and Storage |
3,157 | - |
RFQ |
डेटाशीत |
Tube | DTMOSIV | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | Through Hole |
|
TPHR9003NL1,LQUMOS9 SOP-ADV(N) PD=78W F=1MHZ Toshiba Semiconductor and Storage |
14,367 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 800mW (Ta), 170W (Tc) | 150°C | Surface Mount | |
|
|
TPH2R608NH,L1QMOSFET N-CH 75V 150A 8SOP Toshiba Semiconductor and Storage |
69,968 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 150A (Tc) | 10V | 2.6mOhm @ 50A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6000 pF @ 37.5 V | - | 142W (Tc) | 150°C (TJ) | Surface Mount |
|
|
TK10A60E,S5XMOSFET N-CH 600V 10A TO220SIS Toshiba Semiconductor and Storage |
2,513 | - |
RFQ |
डेटाशीत |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 1300 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
|
|
TK12A50E,S5XMOSFET N-CH 500V 12A TO220SIS Toshiba Semiconductor and Storage |
2,061 | - |
RFQ |
डेटाशीत |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1.2mA | 40 nC @ 10 V | ±30V | 1300 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
|
TK65G10N1,RQMOSFET N-CH 100V 65A D2PAK Toshiba Semiconductor and Storage |
2,767 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Ta) | 10V | 4.5mOhm @ 32.5A, 10V | 4V @ 1mA | 81 nC @ 10 V | ±20V | 5400 pF @ 50 V | - | 156W (Tc) | 150°C (TJ) | Surface Mount |
|
SSM3K7002KF,LFMOSFET N-CH 60V 400MA S-MINI Toshiba Semiconductor and Storage |
26,665 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 270mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
TK110A65Z,S4XMOSFET N-CH 650V 24A TO220SIS Toshiba Semiconductor and Storage |
2,899 | - |
RFQ |
डेटाशीत |
Tube | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
|
TK110E65Z,S1X650V DTMOS VI TO-220 110MOHM Toshiba Semiconductor and Storage |
3,282 | - |
RFQ |
डेटाशीत |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | 150°C | Through Hole |
|
TPW1R005PL,L1QMOSFET N-CH 45V 300A 8DSOP Toshiba Semiconductor and Storage |
8,837 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 300A (Tc) | 4.5V, 10V | - | 2.4V @ 1mA | 122 nC @ 10 V | ±20V | 9600 pF @ 22.5 V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount |
|
SSM3K376R,LFMOSFET N-CH 30V 4A SOT23F Toshiba Semiconductor and Storage |
12,337 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 1.8V, 4.5V | 56mOhm @ 2A, 4.5V | 1V @ 1mA | 2.2 nC @ 4.5 V | +12V, -8V | 200 pF @ 10 V | - | 2W (Ta) | 150°C | Surface Mount |
|
SSM3J331R,LFMOSFET P-CH 20V 4A SOT23F Toshiba Semiconductor and Storage |
12,558 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 55mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4 nC @ 4.5 V | ±8V | 630 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
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