फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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SSM3K7002BF,LFMOSFET N-CH 60V 200MA SC59 Toshiba Semiconductor and Storage |
3,444 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIV | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | - | - | ±20V | 17 pF @ 25 V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount |
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TPH1R306PL1,LQUMOS9 SOP-ADV(N) PD=170W F=1MHZ Toshiba Semiconductor and Storage |
2,347 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 1.34mOhm @ 50A, 10V | 2.5V @ 1mA | 91 nC @ 10 V | ±20V | 8100 pF @ 30 V | - | 960mW (Ta), 210W (Tc) | 175°C | Surface Mount | |
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TK5R3E08QM,S1XUMOS10 TO-220AB 80V 5.3MOHM Toshiba Semiconductor and Storage |
3,056 | - |
RFQ |
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Tube | U-MOSX-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 5.3mOhm @ 50A, 10V | 3.5V @ 700µA | 55 nC @ 10 V | ±20V | 3980 pF @ 40 V | - | 150W (Tc) | 175°C | Through Hole |
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T2N7002AK,LMMOSFET N-CH 60V 200MA SOT23 Toshiba Semiconductor and Storage |
224,832 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35 nC @ 4.5 V | ±20V | 17 pF @ 10 V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount |
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T2N7002BK,LMMOSFET N-CH 60V 400MA SOT23-3 Toshiba Semiconductor and Storage |
191,175 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM3K35CTC,L3FMOSFET N-CH 20V 250MA CST3C Toshiba Semiconductor and Storage |
331,418 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 250mA (Ta) | 1.2V, 4.5V | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34 nC @ 4.5 V | ±10V | 36 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM3K15AMFV,L3FMOSFET N-CH 30V 100MA VESM Toshiba Semiconductor and Storage |
2,533 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5 pF @ 3 V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM3K36MFV,L3FMOSFET N-CH 20V 500MA VESM Toshiba Semiconductor and Storage |
100,536 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 500mA (Ta) | 1.5V, 5V | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23 nC @ 4 V | ±10V | 46 pF @ 10 V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount |
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TK16C60W,S1VQMOSFET N-CH 600V 15.8A I2PAK Toshiba Semiconductor and Storage |
3,521 | - |
RFQ |
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Tube | DTMOSIV | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | Through Hole |
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TK20C60W,S1VQMOSFET N-CH 600V 20A I2PAK Toshiba Semiconductor and Storage |
2,142 | - |
RFQ |
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Tube | DTMOSIV | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | Through Hole |
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SSM3J56MFV,L3FMOSFET P-CH 20V 800MA VESM Toshiba Semiconductor and Storage |
97,121 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.2V, 4.5V | 390mOhm @ 800mA, 4.5V | - | - | ±8V | 100 pF @ 10 V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM3J332R,LFMOSFET P-CH 30V 6A SOT23F Toshiba Semiconductor and Storage |
100,039 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 1.8V, 10V | 42mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2 nC @ 4.5 V | ±12V | 560 pF @ 15 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
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SSM3J328R,LFMOSFET P-CH 20V 6A SOT23F Toshiba Semiconductor and Storage |
17,507 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | ±8V | 840 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
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TPH11006NL,LQMOSFET N-CH 60V 17A 8SOP Toshiba Semiconductor and Storage |
17,945 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 4.5V, 10V | 11.4mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23 nC @ 10 V | ±20V | 2000 pF @ 30 V | - | 1.6W (Ta), 34W (Tc) | 150°C (TJ) | Surface Mount |
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SSM3K329R,LFMOSFET N CH 30V 3.5A 2-3Z1A Toshiba Semiconductor and Storage |
49,177 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.5A (Ta) | 1.8V, 4V | 126mOhm @ 1A, 4V | 1V @ 1mA | 1.5 nC @ 4 V | ±12V | 123 pF @ 15 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
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SSM3J338R,LFMOSFET P-CH 12V 6A SOT23F Toshiba Semiconductor and Storage |
105,779 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVII | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Ta) | 1.8V, 8V | 17.6mOhm @ 6A, 8V | 1V @ 1mA | 19.5 nC @ 4.5 V | ±10V | 1400 pF @ 6 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
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SSM3J133TU,LFMOSFET P-CH 20V 5.5A UFM Toshiba Semiconductor and Storage |
129,982 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.5A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | ±8V | 840 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM6J501NU,LFMOSFET P-CH 20V 10A 6UDFNB Toshiba Semiconductor and Storage |
2,272 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta) | 1.5V, 4.5V | 15.3mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9 nC @ 4.5 V | ±8V | 2600 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
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SSM3J130TU,LFMOSFET P-CH 20V 4.4A UFM Toshiba Semiconductor and Storage |
262,227 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.4A (Ta) | 1.5V, 4.5V | 25.8mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8 nC @ 4.5 V | ±8V | 1800 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
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SSM3K2615R,LFMOSFET N-CH 60V 2A SOT23F Toshiba Semiconductor and Storage |
52,353 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | π-MOSV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 3.3V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | - | ±20V | 150 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |