फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GPA807DIODE GEN PURP 8A 1000V TO220AC Taiwan Semiconductor Corporation |
3,528 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 8A (DC) | -55°C ~ 150°C | 1.1 V @ 8 A | ||
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ES3B R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,013 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | ||
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SF13GHDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,390 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A (DC) | -55°C ~ 150°C | 950 mV @ 1 A | |
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SR009DIODE SCHOTTKY 0.5A 90V DO-41 Taiwan Semiconductor Corporation |
2,086 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 90 V | 90 V | 500mA (DC) | -55°C ~ 150°C | 850 mV @ 500 mA | ||
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HS5F M6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,876 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 5A (DC) | -55°C ~ 150°C | 1 V @ 5 A | ||
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MBRF16100HDIODE SCHOTTKY 100V 16A ITO220 Taiwan Semiconductor Corporation |
3,572 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 100 V | 100 V | 16A (DC) | -55°C ~ 150°C | 850 mV @ 16 A | |
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GPA806DIODE GEN PURP 8A 800V TO220AC Taiwan Semiconductor Corporation |
2,751 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 8A (DC) | -55°C ~ 150°C | 1.1 V @ 8 A | ||
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SK55C R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,077 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 750 mV @ 5 A | ||
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SRA1040DIODE SCHOTTKY 40V 10A TO220AC Taiwan Semiconductor Corporation |
3,718 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 10A (DC) | -55°C ~ 125°C | 550 mV @ 10 A | ||
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UGA15120HDIODE GEN PURP 15A TO220AC Taiwan Semiconductor Corporation |
3,470 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 5 µA @ 1200 V | 1200 V | 15A (DC) | -55°C ~ 175°C | 2.9 V @ 15 A | |
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S10JC R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,375 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 150°C | 1.1 V @ 10 A | ||
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6A60GH A0GDIODE GEN PURP 6A 600V R-6 Taiwan Semiconductor Corporation |
3,625 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 6A (DC) | -55°C ~ 150°C | 1 V @ 6 A | |
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MBRF5200DIODE SCHOTTKY 200V 5A ITO220AC Taiwan Semiconductor Corporation |
3,513 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 5A (DC) | -55°C ~ 150°C | 1.02 V @ 5 A | ||
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S5B M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,897 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
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SF42GHDIODE GEN PURP 100V 4A DO201AD Taiwan Semiconductor Corporation |
3,907 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 4A (DC) | -55°C ~ 150°C | 1 V @ 4 A | |
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SF61GHDIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation |
3,226 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 6A (DC) | -55°C ~ 150°C | 975 mV @ 6 A | |
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MUR305S R7DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,352 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | 875 mV @ 3 A | ||
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1T1GDIODE GEN PURP 1A 50V TS-1 Taiwan Semiconductor Corporation |
2,668 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1.1 V @ 1 A | ||
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SR305DIODE SCHOTTKY 3A 50V DO-201AD Taiwan Semiconductor Corporation |
2,363 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 700 mV @ 3 A | ||
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SRA10100DIODE SCHOTTKY 100V 10A TO220AC Taiwan Semiconductor Corporation |
3,965 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A (DC) | -55°C ~ 150°C | 850 mV @ 10 A |