फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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MUR440S R6GDIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,824 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 175°C | 1.25 V @ 4 A | ||
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MBR1045DIODE SCHOTTKY 10A 45V TO220AB Taiwan Semiconductor Corporation |
3,664 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A (DC) | -55°C ~ 150°C | 700 mV @ 10 A | ||
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SR303HDIODE SCHOTTKY 3A 30V DO-201AD Taiwan Semiconductor Corporation |
2,595 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 3A (DC) | -55°C ~ 125°C | 550 mV @ 3 A | |
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RS3A R7DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,985 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 150 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
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6A40GH A0GDIODE GEN PURP 6A 400V R-6 Taiwan Semiconductor Corporation |
2,140 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 6A (DC) | -55°C ~ 150°C | 1 V @ 6 A | |
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MBR1645HDIODE SCHOTTKY 45V 16A TO220 Taiwan Semiconductor Corporation |
3,394 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 45 V | 45 V | 16A (DC) | -55°C ~ 150°C | 630 mV @ 16 A | |
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S4D M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,200 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
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SRA1040HDIODE SCHOTTKY 40V 10A TO220AC Taiwan Semiconductor Corporation |
2,817 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 10A (DC) | -55°C ~ 125°C | 550 mV @ 10 A | |
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MBR1690DIODE SCHOTTKY 90V 16A TO220 Taiwan Semiconductor Corporation |
3,052 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 90 V | 90 V | 16A (DC) | -55°C ~ 150°C | 850 mV @ 16 A | ||
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S4A R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,087 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
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HER301G5DIODE GEN PURP 3A 300V DO-201AD Taiwan Semiconductor Corporation |
3,280 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 1 V @ 3 A | ||
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RSFGLHR3GDIODE GEN PURP 400V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,419 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
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RSFKLHR3GDIODE GEN PURP 800V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,073 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
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RS1ALHRUGDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
2,579 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
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ES1B R3GDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
2,884 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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SF32GHDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,489 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | |
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SSL33 R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,036 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 3A (DC) | -55°C ~ 125°C | 410 mV @ 3 A | ||
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SR1202HDIODE SCHOTTKY 20V 12A DO201AD Taiwan Semiconductor Corporation |
2,109 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 12A (DC) | -55°C ~ 200°C | 550 mV @ 12 A | |
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SF31GHDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,678 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | |
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S8MC R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,785 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 8A (DC) | -55°C ~ 150°C | 985 mV @ 8 A |