फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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FR152GHDIODE FAST REC 1.5A 100V DO-15 Taiwan Semiconductor Corporation |
2,409 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1.5A (DC) | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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HER601GDIODE GEN PURP 6A 50V R-6 Taiwan Semiconductor Corporation |
3,310 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 6A (DC) | -55°C ~ 150°C | 1 V @ 6 A | ||
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SFT11GHDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,814 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 950 mV @ 1 A | |
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SF43GDIODE GEN PURP 150V 4A DO201AD Taiwan Semiconductor Corporation |
2,032 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 4A (DC) | -55°C ~ 150°C | 1 V @ 4 A | ||
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F1T2GHDIODE FAST REC 1A 100V TS-1 Taiwan Semiconductor Corporation |
2,525 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | |
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SSL33 V6GDIODE SCHOTTKY 3A 30V DO-214AB Taiwan Semiconductor Corporation |
3,401 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | - | |
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ES1FL RUGDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
3,632 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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SSL34 V6GDIODE SCHOTTKY 3A 40V DO-214AB Taiwan Semiconductor Corporation |
2,967 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | - | |
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ES1GL RUGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,744 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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ES1CLHRVGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,671 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
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SFA1008GDIODE GEN PURP 600V 10A TO220AC Taiwan Semiconductor Corporation |
2,850 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 150°C | 1.7 V @ 10 A | ||
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SRT19HDIODE SCHOTTKY 1A 90V TS-1 Taiwan Semiconductor Corporation |
2,098 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 28pF @ 4V, 1MHz | - | 100 µA @ 90 V | 90 V | 1A (DC) | -55°C ~ 150°C | 800 mV @ 1 A | |
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SFA1003GHDIODE GEN PURP 150V 10A TO220AC Taiwan Semiconductor Corporation |
3,559 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 10A (DC) | -55°C ~ 150°C | 975 mV @ 10 A | |
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SR109DIODE SCHOTTKY 90V 1A DO-41 Taiwan Semiconductor Corporation |
3,007 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A | ||
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1T2GDIODE GEN PURP 1A 100V TS-1 Taiwan Semiconductor Corporation |
3,913 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 1.1 V @ 1 A | ||
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MUR420SHDIODE GEN PURP 200V 4A DO214AB Taiwan Semiconductor Corporation |
2,091 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 65pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 4A (DC) | -55°C ~ 175°C | 875 mV @ 4 A | |
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ES2D M4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
3,235 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
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MUR460SHDIODE GEN PURP 600V 4A DO214AB Taiwan Semiconductor Corporation |
3,557 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 4A (DC) | -55°C ~ 175°C | 1.25 V @ 4 A | |
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ES2DV M4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
2,513 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 20 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
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MUR440SHDIODE GEN PURP 400V 4A DO214AB Taiwan Semiconductor Corporation |
2,743 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 4A (DC) | -55°C ~ 175°C | 1.25 V @ 4 A |