फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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SS23HM4GDIODE SCHOTTKY 30V 2A DO214AA Taiwan Semiconductor Corporation |
2,514 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 2A | -55°C ~ 125°C | 500 mV @ 2 A |
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S8MC V6GDIODE GEN PURP 8A DO214AB Taiwan Semiconductor Corporation |
3,589 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 1000 V | - | 8A | -55°C ~ 150°C | - | |
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SS24HM4GDIODE SCHOTTKY 40V 2A DO214AA Taiwan Semiconductor Corporation |
2,610 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 125°C | 500 mV @ 2 A |
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SK510C V6GDIODE SCHOTTKY 5A 100V DO-214AB Taiwan Semiconductor Corporation |
2,364 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | |
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SS26HM4GDIODE SCHOTTKY 60V 2A DO214AA Taiwan Semiconductor Corporation |
2,079 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
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SK53C V6GDIODE SCHOTTKY 5A 30V DO-214AB Taiwan Semiconductor Corporation |
3,380 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | |
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SRAF5150HDIODE SCHOTTKY 150V 5A ITO220AC Taiwan Semiconductor Corporation |
2,766 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 5A (DC) | -55°C ~ 150°C | 950 mV @ 5 A | |
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1N5392GDIODE GEN PURP 1.5A 100V DO-15 Taiwan Semiconductor Corporation |
2,517 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A (DC) | -55°C ~ 150°C | 1.1 V @ 1.5 A | ||
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SRAF5150DIODE SCHOTTKY 150V 5A ITO220AC Taiwan Semiconductor Corporation |
2,392 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 5A (DC) | -55°C ~ 150°C | 950 mV @ 5 A | ||
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SF18GHR0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,859 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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SK54C V6GDIODE SCHOTTKY 5A 40V DO-214AB Taiwan Semiconductor Corporation |
3,585 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | |
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HS3D V6GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,916 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | - | |
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HS3F V6GDIODE GEN PURP 300V 3A DO214AB Taiwan Semiconductor Corporation |
3,248 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | - | |
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HS1K R3GDIODE GEN PURP 800V 1A DO214AC Taiwan Semiconductor Corporation |
2,944 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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HS3G V6GDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
3,476 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | - | |
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US1K R3GDIODE GEN PURP 800V 1A DO214AC Taiwan Semiconductor Corporation |
3,504 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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HS3J V6GDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
2,981 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | - | |
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SR506 R0GDIODE SCHOTTKY 60V 5A DO201AD Taiwan Semiconductor Corporation |
3,032 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 700 mV @ 5 A | |
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HS3K V6GDIODE GEN PURP 800V 3A DO214AB Taiwan Semiconductor Corporation |
3,604 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | - | |
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SR510 R0GDIODE SCHOTTKY 100V 5A DO201AD Taiwan Semiconductor Corporation |
3,416 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A |