फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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SS33 V6GDIODE SCHOTTKY 3A 30V DO-214AB Taiwan Semiconductor Corporation |
2,178 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | - | |
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HS2K M4GDIODE GEN PURP 800V 2A DO214AA Taiwan Semiconductor Corporation |
3,158 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
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SS34 V6GDIODE SCHOTTKY 3A 40V DO-214AB Taiwan Semiconductor Corporation |
3,360 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | - | |
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HS2M M4GDIODE GEN PURP 2A DO214AA Taiwan Semiconductor Corporation |
2,316 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
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SS36 V6GDIODE SCHOTTKY 3A 60V DO-214AB Taiwan Semiconductor Corporation |
3,191 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | - | |
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SR105DIODE SCHOTTKY 1A 50V DO-41 Taiwan Semiconductor Corporation |
2,112 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | ||
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SK515BHM4GDIODE SCHOTTKY 150V 5A DO214AA Taiwan Semiconductor Corporation |
3,603 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 950 mV @ 5 A |
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ES1CL R3GDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,591 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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ES2AAHDIODE GEN PURP 50V 2A DO214AC Taiwan Semiconductor Corporation |
3,949 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 2A (DC) | -55°C ~ 150°C | 950 mV @ 2 A | |
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FR304G R0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
2,799 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
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SF2L4GHR0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,555 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
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SR310 R0GDIODE SCHOTTKY 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,815 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
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SR315 R0GDIODE SCHOTTKY 150V 3A DO201AD Taiwan Semiconductor Corporation |
2,878 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
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SR320 R0GDIODE SCHOTTKY 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,633 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
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ES1JFS M3G35NS, 1A, 600V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
2,486 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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RS1ML RUGDIODE GEN PURP 800MA SUB SMA Taiwan Semiconductor Corporation |
3,191 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
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RSFML RUGDIODE GEN PURP 500MA SUB SMA Taiwan Semiconductor Corporation |
2,274 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
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S1KL RUGDIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation |
2,440 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
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S1ML RUGDIODE GEN PURP 1000V 1A SUB SMA Taiwan Semiconductor Corporation |
2,999 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 1000 V | - | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
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SR210HR0GDIODE SCHOTTKY 100V 2A DO204AC Taiwan Semiconductor Corporation |
3,960 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |