फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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S1ADIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,014 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 175°C | 1.1 V @ 1 A | ||
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SK315A M2GDIODE SCHOTTKY 150V 3A DO214AC Taiwan Semiconductor Corporation |
2,147 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
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RS3JHDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
2,346 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 10 µA @ 600 V | 600 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | |
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FR101GDIODE FAST REC 1A 50V DO-41 Taiwan Semiconductor Corporation |
3,291 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | ||
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RS3DHDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
2,893 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 10 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | |
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FR103GDIODE FAST REC 1A 200V DO-41 Taiwan Semiconductor Corporation |
2,742 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | ||
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HER203GDIODE GEN PURP 2A 200V DO-15 Taiwan Semiconductor Corporation |
3,328 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 2A (DC) | -55°C ~ 150°C | 1 V @ 2 A | ||
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SF15GHR0GDIODE GEN PURP 300V 1A DO204AL Taiwan Semiconductor Corporation |
3,482 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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ES2CADIODE GEN PURP 150V 2A DO214AC Taiwan Semiconductor Corporation |
3,545 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | ||
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SF16GHR0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,461 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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SK56C V6GDIODE SCHOTTKY 5A 60V DO-214AB Taiwan Semiconductor Corporation |
2,340 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 750 mV @ 5 A | |
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SS115 R3GDIODE SCHOTTKY 150V 1A DO214AC Taiwan Semiconductor Corporation |
2,444 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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S2D R5GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
2,765 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
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SK110BHM4GDIODE SCHOTTKY 100V 1A DO214AA Taiwan Semiconductor Corporation |
2,460 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A |
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S2J R5GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
2,143 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
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SK13BHM4GDIODE SCHOTTKY 30V 1A DO214AA Taiwan Semiconductor Corporation |
3,007 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A |
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S2M R5GDIODE GEN PURP 1KV 2A DO214AA Taiwan Semiconductor Corporation |
3,596 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
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SK14BHM4GDIODE SCHOTTKY 40V 1A DO214AA Taiwan Semiconductor Corporation |
3,846 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A |
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SK16BHM4GDIODE SCHOTTKY 60V 1A DO214AA Taiwan Semiconductor Corporation |
3,508 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 750 mV @ 1 A |
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1N5392GHDIODE GEN PURP 1.5A 100V DO-15 Taiwan Semiconductor Corporation |
2,442 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A (DC) | -55°C ~ 150°C | 1.1 V @ 1.5 A |