फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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ES1JHR3GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
2,524 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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MUR190 B0GDIODE GEN PURP 900V 1A DO204AC Taiwan Semiconductor Corporation |
2,635 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
SS25LHRTGDIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation |
3,603 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
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SR804HB0GDIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation |
2,110 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
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SFF1006GHC0GDIODE GEN PURP 400V 10A ITO220AB Taiwan Semiconductor Corporation |
3,739 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 0V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A |
|
ES1JL RFGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,622 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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MUR190A B0GDIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation |
2,006 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
SS26L MQGDIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation |
2,165 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
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SR805 B0GDIODE SCHOTTKY 50V 8A DO201AD Taiwan Semiconductor Corporation |
2,806 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A | |
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SFF1007G C0GDIODE GEN PURP 500V 10A ITO220AB Taiwan Semiconductor Corporation |
3,536 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 0V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A | |
|
ES1JLHR3GDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,695 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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MUR190AHB0GDIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation |
2,692 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A |
|
SS26L MTGDIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation |
2,374 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
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SR805HB0GDIODE SCHOTTKY 50V 8A DO201AD Taiwan Semiconductor Corporation |
3,796 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A |
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SFF1007GA C0GDIODE GEN PURP 500V 10A ITO220AB Taiwan Semiconductor Corporation |
3,858 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A | |
|
ES1JLHRFGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,929 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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MUR190HB0GDIODE GEN PURP 900V 1A DO204AC Taiwan Semiconductor Corporation |
3,945 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A |
|
SS26L RQGDIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation |
3,939 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
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SR806 B0GDIODE SCHOTTKY 60V 8A DO201AD Taiwan Semiconductor Corporation |
3,859 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A | |
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SFF1007GAHC0GDIODE GEN PURP 500V 10A ITO220AB Taiwan Semiconductor Corporation |
3,480 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A |