फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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ES1GL RFGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,270 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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MUR160 B0GDIODE GEN PURP 600V 1A DO204AC Taiwan Semiconductor Corporation |
2,294 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A | |
|
SS25L RTGDIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation |
2,661 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
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SR802HB0GDIODE SCHOTTKY 20V 8A DO201AD Taiwan Semiconductor Corporation |
2,422 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
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SFF1005GA C0GDIODE GEN PURP 300V 10A ITO220AB Taiwan Semiconductor Corporation |
2,128 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 10A | -55°C ~ 150°C | 1.3 V @ 5 A | |
|
ES1GLHRFGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,486 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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MUR160A B0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,309 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A | |
|
SS25LHMQGDIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation |
2,088 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
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SR803 B0GDIODE SCHOTTKY 30V 8A DO201AD Taiwan Semiconductor Corporation |
3,510 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
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SFF1005GAHC0GDIODE GEN PURP 300V 10A ITO220AB Taiwan Semiconductor Corporation |
3,289 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 10A | -55°C ~ 150°C | 1.3 V @ 5 A |
|
ES1HL RFGDIODE GEN PURP 500V 1A SUB SMA Taiwan Semiconductor Corporation |
3,693 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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MUR160AHB0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,732 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
SS25LHMTGDIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation |
2,578 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
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SR803HB0GDIODE SCHOTTKY 30V 8A DO201AD Taiwan Semiconductor Corporation |
2,695 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
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SFF1005GHC0GDIODE GEN PURP 300V 10A ITO220AB Taiwan Semiconductor Corporation |
3,742 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 0V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A |
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ES1HR3GDIODE GEN PURP 500V 1A DO214AC Taiwan Semiconductor Corporation |
3,904 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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MUR160HB0GDIODE GEN PURP 600V 1A DO204AC Taiwan Semiconductor Corporation |
3,641 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
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SS25LHRQGDIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation |
2,495 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
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SR804 B0GDIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation |
3,549 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
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SFF1006GAHC0GDIODE GEN PURP 400V 10A ITO220AB Taiwan Semiconductor Corporation |
2,262 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1.3 V @ 5 A |