फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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ES1DLHRFGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,676 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
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HER307G B0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
3,418 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
SS24L RTGDIODE SCHOTTKY 40V 2A SUB SMA Taiwan Semiconductor Corporation |
3,061 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A | |
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SR509HB0GDIODE SCHOTTKY 90V 5A DO201AD Taiwan Semiconductor Corporation |
3,052 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A |
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SFF1002GHC0GDIODE GEN PURP 100V 10A ITO220AB Taiwan Semiconductor Corporation |
2,078 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A |
|
ES1DV R3GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
3,924 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 17pF @ 4V, 1MHz | 15 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A | |
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HER308G B0GDIODE GEN PURP 3A DO201AD Taiwan Semiconductor Corporation |
3,928 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
SS24LHMQGDIODE SCHOTTKY 40V 2A SUB SMA Taiwan Semiconductor Corporation |
3,867 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
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SR510 B0GDIODE SCHOTTKY 100V 5A DO201AD Taiwan Semiconductor Corporation |
3,550 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | |
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SFF1003G C0GDIODE GEN PURP 150V 10A ITO220AB Taiwan Semiconductor Corporation |
2,148 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A | |
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ES1DVHR3GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,093 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 17pF @ 4V, 1MHz | 15 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
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HER601G B0GDIODE GEN PURP 50V 6A R-6 Taiwan Semiconductor Corporation |
2,019 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
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SS24LHMTGDIODE SCHOTTKY 40V 2A SUB SMA Taiwan Semiconductor Corporation |
3,815 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
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SR510HB0GDIODE SCHOTTKY 100V 5A DO201AD Taiwan Semiconductor Corporation |
3,018 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A |
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SFF1003GA C0GDIODE GEN PURP 150V 10A ITO220AB Taiwan Semiconductor Corporation |
3,646 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A | |
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ES1FHR3GDIODE GEN PURP 300V 1A DO214AC Taiwan Semiconductor Corporation |
3,175 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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HER602G B0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
2,937 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
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SS24LHRQGDIODE SCHOTTKY 40V 2A SUB SMA Taiwan Semiconductor Corporation |
3,159 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
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SR515 B0GDIODE SCHOTTKY 150V 5A DO201AD Taiwan Semiconductor Corporation |
2,986 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 1.05 V @ 5 A | |
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SFF1003GAHC0GDIODE GEN PURP 150V 10A ITO220AB Taiwan Semiconductor Corporation |
3,453 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A |