फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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2A04GHR0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
2,193 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1 V @ 2 A |
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F1T7G R0GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
3,076 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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2A05GHR0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
3,273 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1 V @ 2 A |
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UF4001HR0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,959 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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SS115L MHGDIODE SCHOTTKY 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,258 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A | |
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HER106G B0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,414 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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SR304 B0GDIODE SCHOTTKY 40V 3A DO201AD Taiwan Semiconductor Corporation |
2,293 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 550 mV @ 3 A | |
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SFAF506GHC0GDIODE GEN PURP 400V 5A ITO220AC Taiwan Semiconductor Corporation |
2,226 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.3 V @ 5 A |
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SR010 B0GDIODE SCHOTTKY 100V 500MA DO204 Taiwan Semiconductor Corporation |
2,249 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 850 mV @ 500 mA | |
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UF4002 R0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,568 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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SS115LHM2GDIODE SCHOTTKY 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,091 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A |
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HER107G B0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,754 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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SR304HB0GDIODE SCHOTTKY 40V 3A DO201AD Taiwan Semiconductor Corporation |
3,496 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 550 mV @ 3 A |
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SFAF507G C0GDIODE GEN PURP 500V 5A ITO220AC Taiwan Semiconductor Corporation |
3,217 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 5A | -55°C ~ 150°C | 1.7 V @ 8 A | |
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SR010HB0GDIODE SCHOTTKY 100V 500MA DO204 Taiwan Semiconductor Corporation |
3,599 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 850 mV @ 500 mA |
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UF4002HR0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,341 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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SS115LHMHGDIODE SCHOTTKY 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,910 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A |
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HER108G B0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
3,528 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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SR305 B0GDIODE SCHOTTKY 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,911 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 700 mV @ 3 A | |
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SFAF507GHC0GDIODE GEN PURP 500V 5A ITO220AC Taiwan Semiconductor Corporation |
3,968 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 5A | -55°C ~ 150°C | 1.7 V @ 8 A |