फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SR105 B0GDIODE SCHOTTKY 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,912 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
ES1AHR3GDIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,680 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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HER157G B0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,664 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
SS22L RTGDIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation |
2,280 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A | |
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SR310HB0GDIODE SCHOTTKY 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,407 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
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SFAF803GHC0GDIODE GEN PURP 150V 8A ITO220AC Taiwan Semiconductor Corporation |
3,194 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 90pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
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SR105HB0GDIODE SCHOTTKY 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,750 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A |
|
ES1AL R3GDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,169 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
S1B M2GDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
2,385 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
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HER158G B0GDIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation |
2,592 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
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SS22LHMQGDIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation |
2,456 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
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SR315 B0GDIODE SCHOTTKY 150V 3A DO201AD Taiwan Semiconductor Corporation |
2,502 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
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SFAF804G C0GDIODE GEN PURP 200V 8A ITO220AC Taiwan Semiconductor Corporation |
3,142 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 90pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
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SR106 B0GDIODE SCHOTTKY 60V 1A DO204AL Taiwan Semiconductor Corporation |
2,205 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
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ES1AL RFGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,599 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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HER201G B0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
3,382 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
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SS22LHMTGDIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation |
2,110 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
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SR315HB0GDIODE SCHOTTKY 150V 3A DO201AD Taiwan Semiconductor Corporation |
2,407 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
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SFAF804GHC0GDIODE GEN PURP 200V 8A ITO220AC Taiwan Semiconductor Corporation |
3,702 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 90pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
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SR106HB0GDIODE SCHOTTKY 60V 1A DO204AL Taiwan Semiconductor Corporation |
3,292 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A |