फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SR109HR0GDIODE SCHOTTKY 90V 1A DO204AL Taiwan Semiconductor Corporation |
2,856 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A |
![]() |
FR307G B0GDIODE GEN PURP 3A DO201AD Taiwan Semiconductor Corporation |
3,006 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
![]() |
SR220 B0GDIODE SCHOTTKY 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,461 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
![]() |
SFAF503G C0GDIODE GEN PURP 150V 5A ITO220AC Taiwan Semiconductor Corporation |
3,287 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 975 mV @ 5 A | |
|
SS110L M2GDIODE SCHOTTKY 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,050 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
![]() |
SR005 B0GDIODE SCHOTTKY 50V 500MA DO204AL Taiwan Semiconductor Corporation |
3,393 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA | |
![]() |
UF1A R0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,812 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
![]() |
HER101G B0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,882 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
![]() |
SR220HB0GDIODE SCHOTTKY 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,975 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
![]() |
SFAF503GHC0GDIODE GEN PURP 150V 5A ITO220AC Taiwan Semiconductor Corporation |
2,229 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 975 mV @ 5 A |
|
SS110L MHGDIODE SCHOTTKY 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,220 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
![]() |
SR005HB0GDIODE SCHOTTKY 50V 500MA DO204AL Taiwan Semiconductor Corporation |
2,411 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA |
![]() |
UF1AHR0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,397 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
![]() |
HER102G B0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,753 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
![]() |
SR302 B0GDIODE SCHOTTKY 20V 3A DO201AD Taiwan Semiconductor Corporation |
2,571 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 550 mV @ 3 A | |
![]() |
SFAF504GHC0GDIODE GEN PURP 200V 5A ITO220AC Taiwan Semiconductor Corporation |
3,599 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 975 mV @ 5 A |
|
SS110LHM2GDIODE SCHOTTKY 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,279 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
![]() |
SR006 B0GDIODE SCHOTTKY 60V 500MA DO204AL Taiwan Semiconductor Corporation |
2,599 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA | |
![]() |
UF1B R0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,157 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
![]() |
HER103G B0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,989 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |