फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ES3CHM6GDIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation |
3,942 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
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SK19B M4GDIODE SCHOTTKY 90V 1A DO214AA Taiwan Semiconductor Corporation |
2,584 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 850 mV @ 3 A | |
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SF61G B0GDIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation |
3,097 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A | |
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SFAF1606GHC0GDIODE GEN PURP 400V 16A ITO220AC Taiwan Semiconductor Corporation |
3,731 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 16A | -55°C ~ 150°C | 1.3 V @ 16 A |
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FR152G B0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,367 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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SR1203HB0GDIODE SCHOTTKY 30V 12A DO201AD Taiwan Semiconductor Corporation |
3,639 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 12A | -50°C ~ 150°C | 550 mV @ 12 A |
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ES3D M6GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
2,094 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
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SK19BHM4GDIODE SCHOTTKY 90V 1A DO214AA Taiwan Semiconductor Corporation |
3,554 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 850 mV @ 3 A |
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SF61GHB0GDIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation |
3,487 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A |
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BAS20W RVGDIODE GEN PURP 150V 200MA SOT323 Taiwan Semiconductor Corporation |
2,840 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 200mA | -55°C ~ 150°C | 1.25 V @ 100 mA | |
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BAS21W RVGDIODE GEN PURP 250V 200MA SOT323 Taiwan Semiconductor Corporation |
2,257 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 250 V | 250 V | 200mA | -55°C ~ 150°C | 1.25 V @ 100 mA | |
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SFAF1607G C0GDIODE GEN PURP 500V 16A ITO220AC Taiwan Semiconductor Corporation |
2,774 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 16 A | |
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FR152GHB0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,408 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
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SR1204 B0GDIODE SCHOTTKY 40V 12A DO201AD Taiwan Semiconductor Corporation |
2,719 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 12A | -50°C ~ 150°C | 550 mV @ 12 A | |
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ES3DHM6GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,369 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
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SK22A M2GDIODE SCHOTTKY 20V 2A DO214AC Taiwan Semiconductor Corporation |
2,687 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A | |
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SF62G B0GDIODE GEN PURP 100V 6A DO201AD Taiwan Semiconductor Corporation |
3,329 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A | |
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SFAF1607GHC0GDIODE GEN PURP 500V 16A ITO220AC Taiwan Semiconductor Corporation |
2,586 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 16 A |
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FR153G B0GDIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,944 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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SR1204HB0GDIODE SCHOTTKY 40V 12A DO201AD Taiwan Semiconductor Corporation |
2,958 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 12A | -50°C ~ 150°C | 550 mV @ 12 A |