फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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US1B M2GDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
3,287 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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SRT110HA0GDIODE SCHOTTKY 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,748 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
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S3ABHM4GDIODE GEN PURP 50V 3A DO214AA Taiwan Semiconductor Corporation |
2,880 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A |
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SF45GHB0GDIODE GEN PURP 300V 4A DO201AD Taiwan Semiconductor Corporation |
3,154 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A |
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SR110 B0GDIODE SCHOTTKY 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,130 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A | |
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SFAF1603G C0GDIODE GEN PURP 150V 16A ITO220AC Taiwan Semiconductor Corporation |
2,188 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 130pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -55°C ~ 150°C | 975 mV @ 16 A | |
|
US1BHM2GDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
3,552 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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SRT115 A0GDIODE SCHOTTKY 150V 1A TS-1 Taiwan Semiconductor Corporation |
3,196 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A | |
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S3BB M4GDIODE GEN PURP 100V 3A DO214AA Taiwan Semiconductor Corporation |
3,325 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
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SF46G B0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
3,035 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A | |
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SR110HB0GDIODE SCHOTTKY 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,201 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A |
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SFAF1603GHC0GDIODE GEN PURP 150V 16A ITO220AC Taiwan Semiconductor Corporation |
2,900 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 130pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -55°C ~ 150°C | 975 mV @ 16 A |
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ES3A M6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
2,898 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
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SRT115HA0GDIODE SCHOTTKY 150V 1A TS-1 Taiwan Semiconductor Corporation |
3,790 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A |
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S3BBHM4GDIODE GEN PURP 100V 3A DO214AA Taiwan Semiconductor Corporation |
2,255 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A |
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SF46GHB0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
3,907 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A |
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SR115 B0GDIODE SCHOTTKY 150V 1A DO204AL Taiwan Semiconductor Corporation |
2,768 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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SFAF1604G C0GDIODE GEN PURP 200V 16A ITO220AC Taiwan Semiconductor Corporation |
2,119 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 130pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -55°C ~ 150°C | 975 mV @ 16 A | |
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ES3AHM6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
2,289 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
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SRT12 A0GDIODE SCHOTTKY 20V 1A TS-1 Taiwan Semiconductor Corporation |
3,091 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |