फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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SFAF1006GHC0GDIODE GEN PURP 400V 10A ITO220AC Taiwan Semiconductor Corporation |
2,831 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 140pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A |
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SF1602G C0GDIODE GEN PURP 100V 16A TO220AB Taiwan Semiconductor Corporation |
2,096 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A | |
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TSN520M60 S4GDIODE GEN PURP 60V 20A 8PDFN Taiwan Semiconductor Corporation |
3,990 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 20A | -55°C ~ 150°C | 580 mV @ 20 A | |
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SR809 A0GDIODE SCHOTTKY 90V 8A DO201AD Taiwan Semiconductor Corporation |
3,659 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 8A | -55°C ~ 150°C | 920 mV @ 8 A | |
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S1MLHMHGDIODE GEN PURP 1000V 1A SUB SMA Taiwan Semiconductor Corporation |
2,324 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 1000 V | - | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
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SF42G B0GDIODE GEN PURP 100V 4A DO201AD Taiwan Semiconductor Corporation |
2,644 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 1 V @ 4 A | |
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SFAF1007G C0GDIODE GEN PURP 500V 10A ITO220AC Taiwan Semiconductor Corporation |
2,248 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 140pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
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SF1602GHC0GDIODE GEN PURP 100V 16A TO220AB Taiwan Semiconductor Corporation |
3,307 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A |
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TSN525M60 S4GDIODE GEN PURP 60V 25A 8PDFN Taiwan Semiconductor Corporation |
3,794 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 25A | -55°C ~ 150°C | 630 mV @ 25 A | |
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SR809HA0GDIODE SCHOTTKY 90V 8A DO201AD Taiwan Semiconductor Corporation |
3,046 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 8A | -55°C ~ 150°C | 920 mV @ 8 A |
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S2A M4GDIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation |
3,849 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
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SF42GHB0GDIODE GEN PURP 100V 4A DO201AD Taiwan Semiconductor Corporation |
2,107 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 1 V @ 4 A |
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SFAF1007GHC0GDIODE GEN PURP 500V 10A ITO220AC Taiwan Semiconductor Corporation |
2,986 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 140pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A |
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SF1602PT C0GDIODE GEN PURP 100V 16A TO247AD Taiwan Semiconductor Corporation |
2,612 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 950 mV @ 8 A | |
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TSN525M60HS4GDIODE GEN PURP 60V 25A 8PDFN Taiwan Semiconductor Corporation |
2,101 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 25A | -55°C ~ 150°C | 630 mV @ 25 A |
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SR810 A0GDIODE SCHOTTKY 100V 8A DO201AD Taiwan Semiconductor Corporation |
2,670 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 920 mV @ 8 A | |
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S2AA M2GDIODE GEN PURP 50V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,046 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
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SF43G B0GDIODE GEN PURP 150V 4A DO201AD Taiwan Semiconductor Corporation |
3,218 | - |
RFQ |
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Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 4A | -55°C ~ 150°C | 1 V @ 4 A | |
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SFAF1008GHC0GDIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation |
2,954 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 140pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A |
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TSSA5U50 M2GDIODE SCHOTTKY 50V 5A DO214AC Taiwan Semiconductor Corporation |
3,116 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 540 mV @ 5 A |