फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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TK40J20D,S1F(OMOSFET N-CH 200V 40A TO3P Toshiba Semiconductor and Storage |
3,668 | - |
RFQ |
Tray | π-MOSVIII | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 40A (Ta) | 10V | 44mOhm @ 20A, 10V | 3.5V @ 1mA | 100 nC @ 10 V | ±20V | 4300 pF @ 100 V | - | 260W (Tc) | 150°C | Through Hole | |
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TPCC8104,L1QMOSFET P-CH 30V 20A 8TSON Toshiba Semiconductor and Storage |
3,181 | - |
RFQ |
Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | 150°C | Surface Mount | |
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TK12J60W,S1VE(SMOSFET N-CH 600V 11.5A TO3P Toshiba Semiconductor and Storage |
2,899 | - |
RFQ |
Tray | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 110W (Tc) | 150°C | Through Hole | |
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TPCA8128,L1QMOSFET P-CH 30V 34A 8SOP Toshiba Semiconductor and Storage |
2,952 | - |
RFQ |
Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Ta) | 4.5V, 10V | 4.8mOhm @ 17A, 10V | 2V @ 500µA | 115 nC @ 10 V | +20V, -25V | 4800 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C | Surface Mount | |
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TK28N65W,S1FMOSFET N-CH 650V 27.6A TO247 Toshiba Semiconductor and Storage |
3,759 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | Through Hole |
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TK20N60W,S1VFMOSFET N-CH 600V 20A TO247 Toshiba Semiconductor and Storage |
2,140 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | Through Hole |
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TK110Z65Z,S1FPOWER MOSFET TRANSISTOR TO-247-4 Toshiba Semiconductor and Storage |
3,823 | - |
RFQ |
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Tube | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | 150°C | Through Hole |
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TK430A60F,S4X(SMOSFET N-CH Toshiba Semiconductor and Storage |
3,785 | - |
RFQ |
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Bulk | U-MOSIX | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Ta) | 10V | 430mOhm @ 6.5A, 10V | 4V @ 1.75mA | 48 nC @ 10 V | ±30V | 1940 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
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TK370A60F,S4X(SMOSFET N-CH Toshiba Semiconductor and Storage |
2,600 | - |
RFQ |
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Bulk | U-MOSIX | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 2.04mA | 55 nC @ 10 V | ±30V | 2200 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
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TK20A60U(Q,M)MOSFET N-CH 600V 20A TO220SIS Toshiba Semiconductor and Storage |
3,453 | - |
RFQ |
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Bulk | DTMOSII | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 27 nC @ 10 V | ±30V | 1470 pF @ 10 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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TK35A65W5,S5XMOSFET N-CH 650V 35A TO220SIS Toshiba Semiconductor and Storage |
2,116 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Ta) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 50W (Tc) | 150°C (TJ) | Through Hole |
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SSM3K15CT,L3FMOSFET N-CH 30V 100MA CST3 Toshiba Semiconductor and Storage |
3,335 | - |
RFQ |
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Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8 pF @ 3 V | - | 100mW (Ta) | 150°C | Surface Mount |
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TK065Z65Z,S1FPOWER MOSFET TRANSISTOR TO-247-4 Toshiba Semiconductor and Storage |
3,429 | - |
RFQ |
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Tube | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Ta) | 10V | 65mOhm @ 19A, 10V | 4V @ 1.69mA | 62 nC @ 10 V | ±30V | 3650 pF @ 300 V | - | 270W (Tc) | 150°C | Through Hole |
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TK31E60W,S1VXMOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage |
2,221 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole |
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TK31A60W,S4VXMOSFET N-CH 600V 30.8A TO220SIS Toshiba Semiconductor and Storage |
3,074 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | Super Junction | 45W (Tc) | 150°C (TJ) | Through Hole |
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TK35N65W5,S1FMOSFET N-CH 650V 35A TO247 Toshiba Semiconductor and Storage |
3,745 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Ta) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | 150°C (TJ) | Through Hole |
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TK31J60W,S1VQMOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage |
3,066 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole |
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TK31J60W5,S1VQMOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage |
2,553 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole |
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TK62N60W5,S1VFPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
2,996 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61.8A (Ta) | 10V | 45mOhm @ 30.9A, 10V | 4.5V @ 3.1mA | 205 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C | Through Hole |
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TK100L60W,VQMOSFET N-CH 600V 100A TO3P Toshiba Semiconductor and Storage |
3,315 | - |
RFQ |
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Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 100A (Ta) | 10V | 18mOhm @ 50A, 10V | 3.7V @ 5mA | 360 nC @ 10 V | ±30V | 15000 pF @ 30 V | Super Junction | 797W (Tc) | 150°C (TJ) | Through Hole |