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ट्रांजिस्टर - FETs, MOSFETs - सिंगल
| फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TPCA8026(TE12L,Q,MMOSFET N-CH 30V 45A 8SOP Toshiba Semiconductor and Storage |
2,193 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIV | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Ta) | 4.5V, 10V | 2.2mOhm @ 23A, 10V | 2.5V @ 1mA | 113 nC @ 10 V | ±20V | 4200 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount |
|
TK12A60W,S4VXMOSFET N-CH 600V 11.5A TO220SIS Toshiba Semiconductor and Storage |
2,471 | - |
RFQ |
डेटाशीत |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | Super Junction | 35W (Tc) | 150°C (TJ) | Through Hole |
|
TPH2R306NH1,LQUMOS9 SOP-ADV(N) PD=170W F=1MHZ Toshiba Semiconductor and Storage |
4,850 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 136A (Tc) | 6.5V, 10V | 2.3mOhm @ 50A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6100 pF @ 30 V | - | 800mW (Ta), 170W (Tc) | 150°C | Surface Mount | |
|
TPH2R306NH,L1QMOSFET N-CH 60V 60A 8SOP Toshiba Semiconductor and Storage |
1,464 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 6.5V, 10V | 2.3mOhm @ 30A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6100 pF @ 30 V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount |
|
TK25E60X5,S1XMOSFET N-CH 600V 25A TO220 Toshiba Semiconductor and Storage |
3,838 | - |
RFQ |
डेटाशीत |
Tube | DTMOSIV-H | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C (TJ) | Through Hole |
|
TK25N60X5,S1FMOSFET N-CH 600V 25A TO247 Toshiba Semiconductor and Storage |
2,779 | - |
RFQ |
डेटाशीत |
Tube | DTMOSIV-H | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C (TJ) | Through Hole |
|
TK125V65Z,LQMOSFET N-CH 650V 24A 5DFN Toshiba Semiconductor and Storage |
7,486 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 125mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | 150°C | Surface Mount |
|
|
TPH2R408QM,L1QMOSFET N-CH 80V 120A 8SOP Toshiba Semiconductor and Storage |
7,840 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSX-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 2.43mOhm @ 50A, 10V | 3.5V @ 1mA | 87 nC @ 10 V | ±20V | 8300 pF @ 40 V | - | 3W (Ta), 210W (Tc) | 175°C | Surface Mount |
|
XPW6R30ANB,L1XHQMOSFET N-CH 100V 45A 8DSOP Toshiba Semiconductor and Storage |
3,022 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Ta) | 6V, 10V | 6.3mOhm @ 22.5A, 10V | 3.5V @ 500µA | 52 nC @ 10 V | ±20V | 3240 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | 175°C | Surface Mount |
|
TK20V60W5,LVQMOSFET N-CH 600V 20A 4DFN Toshiba Semiconductor and Storage |
424 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 4.5V @ 1mA | 55 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 156W (Tc) | 150°C (TJ) | Surface Mount |
|
|
TK170V65Z,LQMOSFET N-CH 650V 18A 5DFN Toshiba Semiconductor and Storage |
2,470 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 170mOhm @ 9A, 10V | 4V @ 730µA | 29 nC @ 10 V | ±30V | 1635 pF @ 300 V | - | 150W (Tc) | 150°C | Surface Mount |
|
|
TK31V60W5,LVQMOSFET N-CH 600V 30.8A 4DFN Toshiba Semiconductor and Storage |
1,660 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 109mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 240W (Tc) | 150°C (TA) | Surface Mount |
|
|
TK20E60W,S1VXMOSFET N-CH 600V 20A TO220 Toshiba Semiconductor and Storage |
3,915 | - |
RFQ |
डेटाशीत |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | Through Hole |
|
TK28E65W,S1XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
2,316 | - |
RFQ |
डेटाशीत |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C | Through Hole |
|
|
TPCA8109(TE12L1,VMOSFET P-CH 30V 24A 8SOP Toshiba Semiconductor and Storage |
3,484 | - |
RFQ |
Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta) | 4.5V, 10V | 9mOhm @ 12A, 10V | 2V @ 500µA | 56 nC @ 10 V | +20V, -25V | 2400 pF @ 10 V | - | 1.6W (Ta), 30W (Tc) | 150°C | Surface Mount | |
|
|
TK110N65Z,S1FPOWER MOSFET TRANSISTOR TO-247(O Toshiba Semiconductor and Storage |
3,300 | - |
RFQ |
डेटाशीत |
Tube | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | 150°C | Through Hole |
|
|
TK31V60W,LVQMOSFET N-CH 600V 30.8A 4DFN Toshiba Semiconductor and Storage |
2,710 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 98mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | Super Junction | 240W (Tc) | 150°C (TJ) | Surface Mount |
|
TPCC8104,L1Q(CMMOSFET P-CH 30V 20A 8TSON Toshiba Semiconductor and Storage |
3,575 | - |
RFQ |
Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | 150°C | Surface Mount | |
|
|
TPCC8105,L1Q(CMMOSFET P-CH 30V 23A 8TSON Toshiba Semiconductor and Storage |
3,422 | - |
RFQ |
Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta) | 4.5V, 10V | 7.8mOhm @ 11.5A, 10V | 2V @ 500µA | 76 nC @ 10 V | +20V, -25V | 3240 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C | Surface Mount | |
|
|
TPCC8136.LQMOSFET P-CH 20V 9.4A 8TSON Toshiba Semiconductor and Storage |
2,387 | - |
RFQ |
Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 9.4A (Ta) | 1.8V, 4.5V | 16mOhm @ 9.4A, 4.5V | 1.2V @ 1mA | 36 nC @ 5 V | ±12V | 2350 pF @ 10 V | - | 700mW (Ta), 18W (Tc) | 150°C | Surface Mount |
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