फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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SSM3K7002KFU,LXHSMOS LOW RON NCH IO: 0.4A VDSS: Toshiba Semiconductor and Storage |
2,609 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 150mW (Ta) | 150°C | Surface Mount |
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SSM3J168F,LXHFSMOS LOW RON VDS:-60V VGSS:+10/- Toshiba Semiconductor and Storage |
3,692 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4V, 10V | 1.55Ohm @ 200mA, 10V | 2V @ 1mA | 3 nC @ 10 V | +10V, -20V | 82 pF @ 10 V | - | 600mW (Ta) | 150°C | Surface Mount |
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SSM3K376R,LXHFSMOS LOW RON NCH ID: 4A VDSS: 30 Toshiba Semiconductor and Storage |
3,537 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 1.8V, 4.5V | 56mOhm @ 2A, 4.5V | 1V @ 1mA | 2.2 nC @ 4.5 V | +12V, -8V | 200 pF @ 10 V | - | 1W (Ta) | 150°C | Surface Mount |
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SSM6K810R,LXHFAUTO AEC-Q SS MOS N-CH LOGIC-LEV Toshiba Semiconductor and Storage |
2,793 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | ±20V | 430 pF @ 15 V | - | 1.5W (Ta) | 175°C | Surface Mount |
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SSM6K809R,LXHFAUTO AEC-Q SS MOS N-CH LOGIC-LEV Toshiba Semiconductor and Storage |
2,954 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 36mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | ±20V | 550 pF @ 10 V | - | 1.5W (Ta) | 175°C | Surface Mount |
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SSM6J808R,LXHFAUTO AEC-Q SS MOS P-CH LOGIC-LEV Toshiba Semiconductor and Storage |
3,683 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 7A (Ta) | 4V, 10V | 35mOhm @ 2.5A, 10V | 2V @ 100µA | 24.2 nC @ 10 V | +10V, -20V | 1020 pF @ 10 V | - | 1.5W (Ta) | 150°C | Surface Mount |
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TPCP8107,LFMOSFET P-CH 40V 8A PS-8 Toshiba Semiconductor and Storage |
2,746 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 8A (Ta) | 6V, 10V | 18mOhm @ 4A, 10V | 3V @ 1mA | 44.6 nC @ 10 V | +10V, -20V | 2160 pF @ 10 V | - | 1W (Ta) | 175°C | Surface Mount | |
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TPN1200APL,L1QPB-F POWER MOSFET TRANSISTOR TSO Toshiba Semiconductor and Storage |
3,330 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 11.5mOhm @ 20A, 10V | 2.5V @ 300µA | 24 nC @ 10 V | ±20V | 1855 pF @ 50 V | - | 630mW (Ta), 104W (Tc) | 175°C | Surface Mount |
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TK45P03M1,RQ(SMOSFET N-CH 30V 45A DPAK Toshiba Semiconductor and Storage |
3,717 | - |
RFQ |
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Tape & Reel (TR) | U-MOSVI-H | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Ta) | 4.5V, 10V | 9.7mOhm @ 22.5A, 10V | 2.3V @ 200µA | 25 nC @ 10 V | ±20V | 1500 pF @ 10 V | - | - | - | Surface Mount |
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TK4A53D(STA4,Q,M)MOSFET N-CH 525V 4A TO220SIS Toshiba Semiconductor and Storage |
2,912 | - |
RFQ |
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Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 525 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
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TK4A55DA(STA4,Q,M)MOSFET N-CH 550V 3.5A TO220SIS Toshiba Semiconductor and Storage |
3,409 | - |
RFQ |
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Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 3.5A (Ta) | 10V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
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TK4A55D(STA4,Q,M)MOSFET N-CH 550V 4A TO220SIS Toshiba Semiconductor and Storage |
2,308 | - |
RFQ |
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Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
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TK4A60DB(STA4,Q,M)MOSFET N-CH 600V 3.7A TO220SIS Toshiba Semiconductor and Storage |
3,312 | - |
RFQ |
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Tube | π-MOSVII | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.7A (Ta) | 10V | 2Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
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TK10S04K3L(T6L1,NQMOSFET N-CH 40V 10A DPAK Toshiba Semiconductor and Storage |
3,748 | - |
RFQ |
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Tape & Reel (TR) | U-MOSIV | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 6V, 10V | 28mOhm @ 5A, 10V | 3V @ 1mA | 10 nC @ 10 V | ±20V | 410 pF @ 10 V | - | 25W (Tc) | 175°C (TJ) | Surface Mount |
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TK11A60D(STA4,Q,M)MOSFET N-CH 600V 11A TO220SIS Toshiba Semiconductor and Storage |
2,543 | - |
RFQ |
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Tube | π-MOSVII | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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TK15A60D(STA4,Q,M)MOSFET N-CH 600V 15A TO220SIS Toshiba Semiconductor and Storage |
3,473 | - |
RFQ |
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Tube | π-MOSVII | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | Through Hole |
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TK16A45D(STA4,Q,M)MOSFET N-CH 450V 16A TO220SIS Toshiba Semiconductor and Storage |
3,734 | - |
RFQ |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 16A | - | 270mOhm @ 8A, 10V | - | - | - | - | - | - | - | Through Hole |
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TK16A55D(STA4,Q,M)MOSFET N-CH 550V 16A TO220SIS Toshiba Semiconductor and Storage |
2,253 | - |
RFQ |
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Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 16A (Ta) | - | 330mOhm @ 8A, 10V | 4V @ 1mA | 45 nC @ 10 V | - | 2600 pF @ 25 V | - | - | 150°C (TJ) | Through Hole |
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TK18E10K3,S1X(SMOSFET N-CH 100V 18A TO220-3 Toshiba Semiconductor and Storage |
2,062 | - |
RFQ |
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Tube | U-MOSIV | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Ta) | - | 42mOhm @ 9A, 10V | - | 33 nC @ 10 V | - | - | - | - | 150°C (TJ) | Through Hole |
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TK20A25D,S5Q(MMOSFET N-CH 250V 20A TO220SIS Toshiba Semiconductor and Storage |
3,550 | - |
RFQ |
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Tube | π-MOSVII | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 20A (Ta) | 10V | 100mOhm @ 10A, 10V | 3.5V @ 1mA | 55 nC @ 10 V | ±20V | 2550 pF @ 100 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |