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ट्रांजिस्टर - FETs, MOSFETs - सिंगल
| फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SSM6J212FE,LFMOSFET P-CH 20V 4A ES6 Toshiba Semiconductor and Storage |
2,020 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 40.7mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1 nC @ 4.5 V | ±8V | 970 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
|
SSM6J771G,LFMOSFET P-CH 20V 5A 6WCSP Toshiba Semiconductor and Storage |
2,266 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 2.5V, 8.5V | 31mOhm @ 3A, 8.5V | 1.2V @ 1mA | 9.8 nC @ 4.5 V | ±12V | 870 pF @ 10 V | - | 1.2W (Ta) | 150°C (TJ) | Surface Mount |
|
TPN22006NH,LQMOSFET N-CH 60V 9A 8TSON Toshiba Semiconductor and Storage |
2,333 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta) | 6.5V, 10V | 22mOhm @ 4.5A, 10V | 4V @ 100µA | 12 nC @ 10 V | ±20V | 710 pF @ 30 V | - | 700mW (Ta), 18W (Tc) | 150°C (TJ) | Surface Mount |
|
TK1K9A60F,S4XMOSFET N-CH 600V 3.7A TO220SIS Toshiba Semiconductor and Storage |
3,080 | - |
RFQ |
डेटाशीत |
Tube | U-MOSIX | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.7A (Ta) | 10V | 1.9Ohm @ 1.9A, 10V | 4V @ 400µA | 14 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | 150°C | Through Hole |
|
TK90S06N1L,LQMOSFET N-CH 60V 90A TO252-3 Toshiba Semiconductor and Storage |
3,148 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Ta) | 4.5V, 10V | 3.3mOhm @ 45A, 10V | 2.5V @ 500µA | 81 nC @ 10 V | ±20V | 5400 pF @ 10 V | - | 157W (Tc) | 175°C (TJ) | Surface Mount |
|
TPN5900CNH,L1QMOSFET N-CH 150V 9A 8TSON Toshiba Semiconductor and Storage |
2,876 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Ta) | 10V | 59mOhm @ 4.5A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 75 V | - | 700mW (Ta), 39W (Tc) | 150°C (TJ) | Surface Mount |
|
|
TK35A08N1,S4XMOSFET N-CH 80V 35A TO220SIS Toshiba Semiconductor and Storage |
3,218 | - |
RFQ |
डेटाशीत |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 35A (Tc) | 10V | 12.2mOhm @ 17.5A, 10V | 4V @ 300µA | 25 nC @ 10 V | ±20V | 1700 pF @ 40 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
|
TPH1R403NL,L1QMOSFET N-CH 30V 60A 8SOP Toshiba Semiconductor and Storage |
3,072 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Ta) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2.3V @ 500µA | 46 nC @ 10 V | ±20V | 4400 pF @ 15 V | - | 1.6W (Ta), 64W (Tc) | 150°C (TJ) | Surface Mount |
|
TK3A60DA(Q,M)MOSFET N-CH 600V 2.5A TO220SIS Toshiba Semiconductor and Storage |
2,639 | - |
RFQ |
डेटाशीत |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.5A (Ta) | 10V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
|
TK58E06N1,S1XMOSFET N-CH 60V 58A TO220 Toshiba Semiconductor and Storage |
3,921 | - |
RFQ |
डेटाशीत |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 58A (Ta) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46 nC @ 10 V | ±20V | 3400 pF @ 30 V | - | 110W (Tc) | 150°C (TJ) | Through Hole |
|
|
TK34A10N1,S4XMOSFET N-CH 100V 34A TO220SIS Toshiba Semiconductor and Storage |
3,693 | - |
RFQ |
डेटाशीत |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 34A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38 nC @ 10 V | ±20V | 2600 pF @ 50 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
|
|
TK380A60Y,S4XMOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage |
3,777 | - |
RFQ |
डेटाशीत |
Tube | DTMOSV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W | 150°C (TJ) | Through Hole |
|
|
TK560A65Y,S4XMOSFET N-CH 650V 7A TO220SIS Toshiba Semiconductor and Storage |
2,977 | - |
RFQ |
डेटाशीत |
Tube | DTMOSV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W | 150°C (TJ) | Through Hole |
|
|
TK8A60W5,S5VXMOSFET N-CH 600V 8A TO220SIS Toshiba Semiconductor and Storage |
2,905 | - |
RFQ |
डेटाशीत |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Ta) | 10V | 540mOhm @ 4A, 10V | 4.5V @ 400µA | 22 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
|
|
TK290A60Y,S4XMOSFET N-CH 600V 11.5A TO220SIS Toshiba Semiconductor and Storage |
3,023 | - |
RFQ |
डेटाशीत |
Tube | DTMOSV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25 nC @ 10 V | ±30V | 730 pF @ 300 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
|
|
TK5A60W,S4VXMOSFET N-CH 600V 5.4A TO220SIS Toshiba Semiconductor and Storage |
3,589 | - |
RFQ |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | |
|
|
TPH4R008NH,L1QMOSFET N-CH 80V 60A 8SOP Toshiba Semiconductor and Storage |
2,807 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 10V | 4mOhm @ 30A, 10V | 4V @ 1mA | 59 nC @ 10 V | ±20V | 5300 pF @ 40 V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount |
|
SSM3J114TU(T5L,T)MOSFET P-CH 20V 1.8A UFM Toshiba Semiconductor and Storage |
2,313 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.8A (Ta) | 1.5V, 4V | 149mOhm @ 600mA, 4V | 1V @ 1mA | 7.7 nC @ 4 V | ±8V | 331 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
|
|
SSM3J120TU,LFMOSFET P-CH 20V 4A UFM Toshiba Semiconductor and Storage |
2,030 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIV | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4V | 38mOhm @ 3A, 4V | 1V @ 1mA | 22.3 nC @ 4 V | ±8V | 1484 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
|
|
SSM3J129TU(TE85L)MOSFET P-CH 20V 4.6A UFM Toshiba Semiconductor and Storage |
3,211 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | U-MOSV | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.6A (Ta) | 1.5V, 4.5V | 46mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1 nC @ 4.5 V | ±8V | 640 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
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