फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SF3001PT C0GDIODE GEN PURP 50V 30A TO247AD Taiwan Semiconductor Corporation |
2,002 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A | |
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SF3001PTHC0GDIODE GEN PURP 50V 30A TO247AD Taiwan Semiconductor Corporation |
2,933 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A |
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SF3002PT C0GDIODE GEN PURP 100V 30A TO247AD Taiwan Semiconductor Corporation |
3,716 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A | |
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SF3002PTHC0GDIODE GEN PURP 100V 30A TO247AD Taiwan Semiconductor Corporation |
2,213 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A |
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SF3003PT C0GDIODE GEN PURP 150V 30A TO247AD Taiwan Semiconductor Corporation |
2,596 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A | |
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SF3003PTHC0GDIODE GEN PURP 150V 30A TO247AD Taiwan Semiconductor Corporation |
3,405 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A |
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SF3004PTHC0GDIODE GEN PURP 200V 30A TO247AD Taiwan Semiconductor Corporation |
3,326 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A |
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SF3005PT C0GDIODE GEN PURP 300V 30A TO247AD Taiwan Semiconductor Corporation |
2,560 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 30A | -55°C ~ 150°C | 1.3 V @ 15 A | |
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SF3005PTHC0GDIODE GEN PURP 300V 30A TO247AD Taiwan Semiconductor Corporation |
2,697 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 30A | -55°C ~ 150°C | 1.3 V @ 15 A |
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SF3006PTHC0GDIODE GEN PURP 400V 30A TO247AD Taiwan Semiconductor Corporation |
2,209 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 30A | -55°C ~ 150°C | 1.3 V @ 15 A |
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SF801G C0GDIODE GEN PURP 50V 8A TO220AB Taiwan Semiconductor Corporation |
3,692 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A | |
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SF801GHC0GDIODE GEN PURP 50V 8A TO220AB Taiwan Semiconductor Corporation |
2,278 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A |
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ES3DB R5GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
1,885 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 46pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
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S15GCHV7GDIODE GEN PURP 400V 15A DO214AB Taiwan Semiconductor Corporation |
1,690 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 93pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 15A | -55°C ~ 150°C | 1.1 V @ 15 A | |
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SK56C V7GDIODE SCHOTTKY 5A 60V DO-214AB Taiwan Semiconductor Corporation |
1,374 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 750 mV @ 5 A | |
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SF802G C0GDIODE GEN PURP 100V 8A TO220AB Taiwan Semiconductor Corporation |
2,048 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A | |
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SF802GHC0GDIODE GEN PURP 100V 8A TO220AB Taiwan Semiconductor Corporation |
2,404 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A |
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SF803G C0GDIODE GEN PURP 150V 8A TO220AB Taiwan Semiconductor Corporation |
3,249 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A | |
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SF803GHC0GDIODE GEN PURP 150V 8A TO220AB Taiwan Semiconductor Corporation |
2,087 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A |
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SF804G C0GDIODE GEN PURP 200V 8A TO220AB Taiwan Semiconductor Corporation |
2,407 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A |