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डायोड-रेक्टीफायर्स-सिंगल

निर्माता भाग संख्या	उपलब्धता	मूल्य	मात्रा	डेटाशीत	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SK510C V7G DIODE SCHOTTKY 5A 100V DO-214AB Taiwan Semiconductor Corporation	1,292	-	RFQ	डेटाशीत	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	300 µA @ 100 V	100 V	5A	-55°C ~ 150°C	850 mV @ 5 A
SF1604PT C0G DIODE GEN PURP 200V 16A TO247AD Taiwan Semiconductor Corporation	3,297	-	RFQ	डेटाशीत	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	950 mV @ 8 A
SF1604PTHC0G DIODE GEN PURP 200V 16A TO247AD Taiwan Semiconductor Corporation	2,602	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	950 mV @ 8 A
SF1605G C0G DIODE GEN PURP 300V 16A TO220AB Taiwan Semiconductor Corporation	3,766	-	RFQ	डेटाशीत	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
SF1605GHC0G DIODE GEN PURP 300V 16A TO220AB Taiwan Semiconductor Corporation	2,136	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
S8JC V7G DIODE GEN PURP 600V 8A DO214AB Taiwan Semiconductor Corporation	1,199	-	RFQ	डेटाशीत	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	48pF @ 4V, 1MHz	-	10 µA @ 600 V	600 V	8A	-55°C ~ 150°C	985 mV @ 8 A
SF1605PT C0G DIODE GEN PURP 300V 16A TO247AD Taiwan Semiconductor Corporation	3,821	-	RFQ	डेटाशीत	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
SF1605PTHC0G DIODE GEN PURP 300V 16A TO247AD Taiwan Semiconductor Corporation	2,695	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
SF1606GHC0G DIODE GEN PURP 400V 16A TO220AB Taiwan Semiconductor Corporation	2,013	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
SF1606PTHC0G DIODE GEN PURP 400V 16A TO247AD Taiwan Semiconductor Corporation	3,980	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	16A	-55°C ~ 150°C	1.3 V @ 8 A
SF1607G C0G DIODE GEN PURP 500V 16A TO220AB Taiwan Semiconductor Corporation	3,368	-	RFQ	डेटाशीत	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	16A	-55°C ~ 150°C	1.7 V @ 8 A
SF1607GHC0G DIODE GEN PURP 500V 16A TO220AB Taiwan Semiconductor Corporation	2,164	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	16A	-55°C ~ 150°C	1.7 V @ 8 A
SF1607PT C0G DIODE GEN PURP 500V 16A TO247AD Taiwan Semiconductor Corporation	2,814	-	RFQ	डेटाशीत	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	16A	-55°C ~ 150°C	1.7 V @ 8 A
SF1607PTHC0G DIODE GEN PURP 500V 16A TO247AD Taiwan Semiconductor Corporation	2,886	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	16A	-55°C ~ 150°C	1.7 V @ 8 A
SF1608GHC0G DIODE GEN PURP 600V 16A TO220AB Taiwan Semiconductor Corporation	3,987	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	16A	-55°C ~ 150°C	1.7 V @ 8 A
SF1608PT C0G DIODE GEN PURP 600V 16A TO247AD Taiwan Semiconductor Corporation	2,426	-	RFQ	डेटाशीत	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	16A	-55°C ~ 150°C	1.7 V @ 8 A
SF1608PTHC0G DIODE GEN PURP 600V 16A TO247AD Taiwan Semiconductor Corporation	2,207	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	16A	-55°C ~ 150°C	1.7 V @ 8 A
SF2001G C0G DIODE GEN PURP 50V 20A TO220AB Taiwan Semiconductor Corporation	2,110	-	RFQ	डेटाशीत	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	20A	-55°C ~ 150°C	975 mV @ 10 A
SF2001GHC0G DIODE GEN PURP 50V 20A TO220AB Taiwan Semiconductor Corporation	2,224	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	20A	-55°C ~ 150°C	975 mV @ 10 A
S8GC V7G DIODE GEN PURP 400V 8A DO214AB Taiwan Semiconductor Corporation	1,114	-	RFQ	डेटाशीत	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	48pF @ 4V, 1MHz	-	10 µA @ 400 V	400 V	8A	-55°C ~ 150°C	985 mV @ 8 A