फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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RS1MFS MWGDIODE Taiwan Semiconductor Corporation |
2,500 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
SS15L RVGDIODE SCHOTTKY 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,489 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
S15GLW RVGDIODE GEN PURP 400V 1.5A SOD123W Taiwan Semiconductor Corporation |
2,451 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1.5 A | |
|
HS1DL RVGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
1,800 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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SK510B R5GDIODE SCHOTTKY 100V 5A DO214AA Taiwan Semiconductor Corporation |
1,818 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | |
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S10GCHV7GDIODE GEN PURP 400V 10A DO214AB Taiwan Semiconductor Corporation |
2,422 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
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SS24M RSGDIODE SCHOTTKY 40V 2A MICRO SMA Taiwan Semiconductor Corporation |
15,764 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 35pF @ 4V, 1MHz | - | 150 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 600 mV @ 2 A | |
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SS14M RSGDIODE SCHOTTKY 40V 1A MICRO SMA Taiwan Semiconductor Corporation |
13,403 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 50 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 550 mV @ 1 A | |
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S3ABHR5GDIODE GEN PURP 50V 3A DO214AA Taiwan Semiconductor Corporation |
838 | - |
RFQ |
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Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
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S3JBHR5GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
4,250 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
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1N4007G A0GDIODE GEN PURP 1KV 1A DO204AL Taiwan Semiconductor Corporation |
11,063 | - |
RFQ |
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Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
ES2FA R3GDIODE GEN PURP 300V 2A DO214AC Taiwan Semiconductor Corporation |
1,069 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
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HER203G A0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
1,105 | - |
RFQ |
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Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
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ES2BAL M3G35NS, 2A, 100V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
2,810 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | ||
|
SS215LWHRVGDIODE SCHOTTKY 150V 2A SOD123W Taiwan Semiconductor Corporation |
2,000 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
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TSP3H150S S1GDIODE SCHOTTKY 150V 3A TO277A Taiwan Semiconductor Corporation |
7,470 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 150pF @ 4V, 1MHz | 20 ns | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 860 mV @ 3 A | |
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SR306 A0GDIODE SCHOTTKY 60V 3A DO201AD Taiwan Semiconductor Corporation |
1,900 | - |
RFQ |
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Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 700 mV @ 3 A | |
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TPUH6D S1GDIODE GEN PURP 200V 6A TO277A Taiwan Semiconductor Corporation |
3,067 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 45 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.05 V @ 6 A | |
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TSD2G R5G2A 400V ESD CAPABILITY RECTIFIER Taiwan Semiconductor Corporation |
3,400 | - |
RFQ |
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Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | - | |
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SR510 A0GDIODE SCHOTTKY 100V 5A DO201AD Taiwan Semiconductor Corporation |
3,369 | - |
RFQ |
![]() डेटाशीत |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A |