फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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SR504 A0GDIODE SCHOTTKY 40V 5A DO201AD Taiwan Semiconductor Corporation |
2,932 | - |
RFQ |
![]() डेटाशीत |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | |
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SR806 A0GDIODE SCHOTTKY 60V 8A DO201AD Taiwan Semiconductor Corporation |
2,306 | - |
RFQ |
![]() डेटाशीत |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A | |
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TSP10H200S S1GDIODE SCHOTTKY 200V 10A TO277A Taiwan Semiconductor Corporation |
5,843 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 10A | -55°C ~ 150°C | 910 mV @ 10 A | |
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TPMR10D S1GDIODE GEN PURP 200V 10A TO277A Taiwan Semiconductor Corporation |
3,158 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 140pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 10A | -55°C ~ 175°C | 950 mV @ 10 A | |
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PU1BFSH25NS, 1A, 100V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
28,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 25 ns | 2 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 175°C | 930 mV @ 1 A | |
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PU1DFSH25NS, 1A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
28,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 25 ns | 2 µA @ 200 V | 200 V | 1A (DC) | -55°C ~ 175°C | 930 mV @ 1 A | |
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HS1KFS M3G75NS, 1A, 800V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
5,028 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 75 ns | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | ||
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SS13MHRSGDIODE SCHOTTKY 30V 1A MICRO SMA Taiwan Semiconductor Corporation |
20,925 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 520 mV @ 1 A | |
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PU2DLSH25NS, 2A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
20,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 31pF @ 4V, 1MHz | 25 ns | 2 µA @ 200 V | 200 V | 2A (DC) | -55°C ~ 175°C | 930 mV @ 2 A | |
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RS2GAL M3G150NS, 2A, 400V, FAST RECOVERY R Taiwan Semiconductor Corporation |
13,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 11pF @ 4V, 1MHz | 150 ns | 1 µA @ 400 V | 400 V | 2A (DC) | -55°C ~ 150°C | 1.3 V @ 2 A | ||
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RS2MAL M3G500NS, 2A, 1000V, FAST RECOVERY Taiwan Semiconductor Corporation |
4,890 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 1 µA @ 1000 V | 1000 V | 2A (DC) | -55°C ~ 150°C | 1.05 V @ 2 A | ||
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RS2KAL M3G500NS, 2A, 800V, FAST RECOVERY R Taiwan Semiconductor Corporation |
6,998 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 1 µA @ 800 V | 800 V | 2A (DC) | -55°C ~ 150°C | 1.3 V @ 2 A | ||
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HERF1007GAHC0GDIODE, HIGH EFFICIENT Taiwan Semiconductor Corporation |
1,701 | - |
RFQ |
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Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 80 ns | 10 µA @ 800 V | 800 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A |
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ES1JFL RVGDIODE GEN PURP 600V 1A SOD123FL Taiwan Semiconductor Corporation |
107,840 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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ES2CDIODE GEN PURP 150V 2A DO214AA Taiwan Semiconductor Corporation |
2,787 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 2A (DC) | -55°C ~ 150°C | 950 mV @ 2 A | ||
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SRF10200 C0GDIODE, SCHOTTKY, STANDARD, 10A, Taiwan Semiconductor Corporation |
3,292 | - |
RFQ |
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Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 10A | -55°C ~ 150°C | 1 V @ 5 A | |
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TPAU3D S1GDIODE AVALANCHE 200V 3A TO277A Taiwan Semiconductor Corporation |
3,394 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 75 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.88 V @ 3 A | |
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SS12L RUGDIODE SCHOTTKY 20V 1A SUB SMA Taiwan Semiconductor Corporation |
2,681 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A | |
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SS13L RUGDIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation |
2,425 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
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SS14L RUGDIODE SCHOTTKY 40V 1A SUB SMA Taiwan Semiconductor Corporation |
2,126 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |