फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SRAF1640HC0GDIODE SCHOTTKY 40V 16A ITO220AC Taiwan Semiconductor Corporation |
3,533 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 40 V | 40 V | 16A | -55°C ~ 125°C | 550 mV @ 16 A |
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SFF1605G C0GDIODE GEN PURP 300V 16A ITO220AB Taiwan Semiconductor Corporation |
3,974 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A | |
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SRAF1650 C0GDIODE SCHOTTKY 50V 16A ITO220AC Taiwan Semiconductor Corporation |
2,148 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 700 mV @ 16 A | |
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SFF1605GHC0GDIODE GEN PURP 300V 16A ITO220AB Taiwan Semiconductor Corporation |
2,730 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
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SRAF1650HC0GDIODE SCHOTTKY 50V 16A ITO220AC Taiwan Semiconductor Corporation |
2,736 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 700 mV @ 16 A |
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SFF1606GHC0GDIODE GEN PURP 400V 16A ITO220AB Taiwan Semiconductor Corporation |
2,838 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
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SRAF1660 C0GDIODE SCHOTTKY 60V 16A ITO220AC Taiwan Semiconductor Corporation |
2,023 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 60 V | 60 V | 16A | -55°C ~ 150°C | 700 mV @ 16 A | |
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SFF1607G C0GDIODE GEN PURP 500V 16A ITO220AB Taiwan Semiconductor Corporation |
3,021 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A | |
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SRAF1660HC0GDIODE SCHOTTKY 60V 16A ITO220AC Taiwan Semiconductor Corporation |
3,907 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 60 V | 60 V | 16A | -55°C ~ 150°C | 700 mV @ 16 A |
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SFF1607GHC0GDIODE GEN PURP 500V 16A ITO220AB Taiwan Semiconductor Corporation |
3,014 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A |
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HS3G-K M6G50NS, 3A, 400V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
3,426 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 37pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | |
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F1T4G R0GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
3,708 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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HS3D-K M6G50NS, 3A, 200V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
2,302 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 53pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 1 V @ 3 A | |
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F1T5G R0GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
2,075 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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SRT110 R0GDIODE SCHOTTKY 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,575 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
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1N5817 R0GDIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation |
2,029 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A | |
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SRAF1690 C0GDIODE SCHOTTKY 90V 16A ITO220AC Taiwan Semiconductor Corporation |
2,080 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 16A | -55°C ~ 150°C | 920 mV @ 16 A | |
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SFF1608GHC0GDIODE GEN PURP 600V 16A ITO220AB Taiwan Semiconductor Corporation |
3,174 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A |
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SRAF1690HC0GDIODE SCHOTTKY 90V 16A ITO220AC Taiwan Semiconductor Corporation |
2,219 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 16A | -55°C ~ 150°C | 920 mV @ 16 A |
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SFF2001G C0GDIODE GEN PURP 50V 20A ITO220AB Taiwan Semiconductor Corporation |
2,902 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 90pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 20A | -55°C ~ 150°C | 975 mV @ 10 A |