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निर्माता भाग संख्या	उपलब्धता	मूल्य	मात्रा	डेटाशीत	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SKL13B M4G DIODE SCHOTTKY 30V 1A DO214AA Taiwan Semiconductor Corporation	3,765	-	RFQ	डेटाशीत	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	200 µA @ 30 V	30 V	1A	-55°C ~ 125°C	390 mV @ 1 A
SRAF10100 C0G DIODE SCHOTTKY 100V 10A ITO220AC Taiwan Semiconductor Corporation	3,707	-	RFQ	डेटाशीत	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 100 V	100 V	10A	-55°C ~ 150°C	850 mV @ 10 A
UG06CHA1G DIODE GEN PURP 150V 600MA TS-1 Taiwan Semiconductor Corporation	3,962	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	9pF @ 4V, 1MHz	15 ns	5 µA @ 150 V	150 V	600mA	-55°C ~ 150°C	950 mV @ 600 mA
SRAF10100HC0G DIODE SCHOTTKY 100V 10A ITO220AC Taiwan Semiconductor Corporation	3,026	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	10A	-55°C ~ 150°C	850 mV @ 10 A
UG06D A1G DIODE GEN PURP 200V 600MA TS-1 Taiwan Semiconductor Corporation	2,964	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	9pF @ 4V, 1MHz	15 ns	5 µA @ 200 V	200 V	600mA	-55°C ~ 150°C	950 mV @ 600 mA
SRAF10150 C0G DIODE SCHOTTKY 150V 10A ITO220AC Taiwan Semiconductor Corporation	2,306	-	RFQ	डेटाशीत	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 150 V	150 V	10A	-55°C ~ 150°C	950 mV @ 10 A
UG06DHA1G DIODE GEN PURP 200V 600MA TS-1 Taiwan Semiconductor Corporation	3,535	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	9pF @ 4V, 1MHz	15 ns	5 µA @ 200 V	200 V	600mA	-55°C ~ 150°C	950 mV @ 600 mA
SRAF10150HC0G DIODE SCHOTTKY 150V 10A ITO220AC Taiwan Semiconductor Corporation	2,305	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	10A	-55°C ~ 150°C	950 mV @ 10 A
1N5391G A0G DIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation	3,596	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 50 V	50 V	1.5A	-55°C ~ 150°C	1.1 V @ 1.5 A
SRAF1020 C0G DIODE SCHOTTKY 20V 10A ITO220AC Taiwan Semiconductor Corporation	3,408	-	RFQ	डेटाशीत	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 20 V	20 V	10A	-55°C ~ 125°C	550 mV @ 10 A
1N5391GHA0G DIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation	2,443	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 50 V	50 V	1.5A	-55°C ~ 150°C	1.1 V @ 1.5 A
ES2LD M4G DIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation	3,946	-	RFQ	डेटाशीत	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	25pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	2A	-55°C ~ 150°C	940 mV @ 2 A
ES2LG M4G DIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation	2,606	-	RFQ	डेटाशीत	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	20pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
ES2LJ M4G DIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation	3,838	-	RFQ	डेटाशीत	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	20pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SRAF1020HC0G DIODE SCHOTTKY 20V 10A ITO220AC Taiwan Semiconductor Corporation	3,332	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 20 V	20 V	10A	-55°C ~ 125°C	550 mV @ 10 A
1N5392G A0G DIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation	3,451	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 100 V	100 V	1.5A	-55°C ~ 150°C	1.1 V @ 1.5 A
SRAF1030 C0G DIODE SCHOTTKY 30V 10A ITO220AC Taiwan Semiconductor Corporation	2,203	-	RFQ	डेटाशीत	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	10A	-55°C ~ 125°C	550 mV @ 10 A
1N5392GHA0G DIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation	2,329	-	RFQ	डेटाशीत	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 100 V	100 V	1.5A	-55°C ~ 150°C	1.1 V @ 1.5 A
SRAF1030HC0G DIODE SCHOTTKY 30V 10A ITO220AC Taiwan Semiconductor Corporation	2,582	-	RFQ	डेटाशीत	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	10A	-55°C ~ 125°C	550 mV @ 10 A
1N5393G A0G DIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation	2,357	-	RFQ	डेटाशीत	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 200 V	200 V	1.5A	-55°C ~ 150°C	1 V @ 1.5 A