डायोड-रेक्टीफायर्स-सिंगल

फोटो: निर्माता भाग संख्या उपलब्धता मूल्य मात्रा डेटाशीत Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
UF4005 A0G

UF4005 A0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
2,894 -

RFQ

UF4005 A0G

डेटाशीत

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
31DF4 A0G

31DF4 A0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation
3,477 -

RFQ

31DF4 A0G

डेटाशीत

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 20 µA @ 400 V 400 V 3A -40°C ~ 150°C 1.7 V @ 3 A
HS3B V7G

HS3B V7G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation
3,257 -

RFQ

HS3B V7G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
UF4005HA0G

UF4005HA0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
3,577 -

RFQ

UF4005HA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
31DF6 A0G

31DF6 A0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation
2,650 -

RFQ

31DF6 A0G

डेटाशीत

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 20 µA @ 600 V 600 V 3A -40°C ~ 150°C 1.7 V @ 3 A
HS3D V7G

HS3D V7G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation
2,157 -

RFQ

HS3D V7G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C -
UF4006 A0G

UF4006 A0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation
3,135 -

RFQ

UF4006 A0G

डेटाशीत

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
3A100 A0G

3A100 A0G

DIODE GEN PURP 3A DO204AC

Taiwan Semiconductor Corporation
2,159 -

RFQ

3A100 A0G

डेटाशीत

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz - 5 µA @ 1000 V - 3A -55°C ~ 150°C 1.1 V @ 3 A
HS3F V7G

HS3F V7G

DIODE GEN PURP 300V 3A DO214AB

Taiwan Semiconductor Corporation
2,796 -

RFQ

HS3F V7G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C -
UF4006HA0G

UF4006HA0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation
3,697 -

RFQ

UF4006HA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
3A100HA0G

3A100HA0G

DIODE GEN PURP 3A DO204AC

Taiwan Semiconductor Corporation
3,076 -

RFQ

3A100HA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz - 5 µA @ 1000 V - 3A -55°C ~ 150°C 1.1 V @ 3 A
HS3J V7G

HS3J V7G

DIODE GEN PURP 600V 3A DO214AB

Taiwan Semiconductor Corporation
3,168 -

RFQ

HS3J V7G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C -
UF4007HA0G

UF4007HA0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation
2,510 -

RFQ

UF4007HA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
3A60 A0G

3A60 A0G

DIODE GEN PURP 600V 3A DO204AC

Taiwan Semiconductor Corporation
3,174 -

RFQ

3A60 A0G

डेटाशीत

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.1 V @ 3 A
HS5A V6G

HS5A V6G

DIODE GEN PURP 50V 5A DO214AB

Taiwan Semiconductor Corporation
3,710 -

RFQ

HS5A V6G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 5A -55°C ~ 150°C -
1T1G A1G

1T1G A1G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation
3,935 -

RFQ

1T1G A1G

डेटाशीत

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.1 V @ 1 A
3A60HA0G

3A60HA0G

DIODE GEN PURP 600V 3A DO204AC

Taiwan Semiconductor Corporation
3,379 -

RFQ

3A60HA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.1 V @ 3 A
HS5B V6G

HS5B V6G

DIODE GEN PURP 100V 5A DO214AB

Taiwan Semiconductor Corporation
2,782 -

RFQ

HS5B V6G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 5A -55°C ~ 150°C -
1T2G A1G

1T2G A1G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation
2,442 -

RFQ

1T2G A1G

डेटाशीत

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.1 V @ 1 A
6A05G A0G

6A05G A0G

DIODE GEN PURP 50V 6A R-6

Taiwan Semiconductor Corporation
3,356 -

RFQ

6A05G A0G

डेटाशीत

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 50 V 50 V 6A -55°C ~ 150°C 1.1 V @ 6 A
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