डायोड-रेक्टीफायर्स-सिंगल

फोटो: निर्माता भाग संख्या उपलब्धता मूल्य मात्रा डेटाशीत Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SK810C V7G

SK810C V7G

DIODE SCHOTTKY 8A 100V DO-214AB

Taiwan Semiconductor Corporation
3,211 -

RFQ

SK810C V7G

डेटाशीत

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 100 V 100 V 8A -55°C ~ 150°C 900 mV @ 8 A
UF1JHA0G

UF1JHA0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
2,621 -

RFQ

UF1JHA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
2A01G A0G

2A01G A0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation
2,741 -

RFQ

2A01G A0G

डेटाशीत

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
ES3A V6G

ES3A V6G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation
2,982 -

RFQ

ES3A V6G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
UF1K A0G

UF1K A0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation
3,802 -

RFQ

UF1K A0G

डेटाशीत

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
2A01GHA0G

2A01GHA0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation
3,032 -

RFQ

2A01GHA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
ES3A V7G

ES3A V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation
3,664 -

RFQ

ES3A V7G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
UF1KHA0G

UF1KHA0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation
2,489 -

RFQ

UF1KHA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
2A02G A0G

2A02G A0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation
3,432 -

RFQ

2A02G A0G

डेटाशीत

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
ES3B V6G

ES3B V6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation
2,179 -

RFQ

ES3B V6G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
UF1M A0G

UF1M A0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation
3,089 -

RFQ

UF1M A0G

डेटाशीत

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
2A02GHA0G

2A02GHA0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation
3,939 -

RFQ

2A02GHA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
ES3B V7G

ES3B V7G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation
2,325 -

RFQ

ES3B V7G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
UF1MHA0G

UF1MHA0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation
2,576 -

RFQ

UF1MHA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
2A03G A0G

2A03G A0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation
2,725 -

RFQ

2A03G A0G

डेटाशीत

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 1 V @ 2 A
ES3C V6G

ES3C V6G

DIODE GEN PURP 150V 3A DO214AB

Taiwan Semiconductor Corporation
3,317 -

RFQ

ES3C V6G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 3A -55°C ~ 150°C -
UF4001 A0G

UF4001 A0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation
3,806 -

RFQ

UF4001 A0G

डेटाशीत

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
2A03GHA0G

2A03GHA0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation
3,545 -

RFQ

2A03GHA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 1 V @ 2 A
ES3C V7G

ES3C V7G

DIODE GEN PURP 150V 3A DO214AB

Taiwan Semiconductor Corporation
2,904 -

RFQ

ES3C V7G

डेटाशीत

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 3A -55°C ~ 150°C -
UF4001HA0G

UF4001HA0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation
3,535 -

RFQ

UF4001HA0G

डेटाशीत

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
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