फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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TST30L45CW C0GDIODE SCHOTTKY 45V 15A TO220AB Taiwan Semiconductor Corporation |
906 | - |
RFQ |
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Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 550 mV @ 15 A | |
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TST20U45CW C0GDIODE SCHOTTKY 45V 10A TO220AB Taiwan Semiconductor Corporation |
810 | - |
RFQ |
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Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 510 mV @ 10 A | |
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SK36A R3GDIODE SCHOTTKY 60V 3A DO214AC Taiwan Semiconductor Corporation |
435 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 720 mV @ 3 A | |
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S15DLWHRVGDIODE GEN PURP 200V 1.5A SOD123W Taiwan Semiconductor Corporation |
179 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | - | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1.5 A | |
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SK515C V7GDIODE SCHOTTKY 5A 150V DO-214AB Taiwan Semiconductor Corporation |
786 | - |
RFQ |
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Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 950 mV @ 5 A | |
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BYG20D R3GDIODE GEN PURP 200V 1.5A DO214AC Taiwan Semiconductor Corporation |
905 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 75 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
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MUR340SB R5GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
614 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A | |
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ES3G V7GDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
538 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
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ES2AA R3GDIODE GEN PURP 50V 2A DO214AC Taiwan Semiconductor Corporation |
424 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
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ES3J V7GDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
410 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
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ES1ALHRVGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
247 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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SS210 R5GDIODE SCHOTTKY 100V 2A DO214AA Taiwan Semiconductor Corporation |
164 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
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ES2BA R3GDIODE GEN PURP 100V 2A DO214AC Taiwan Semiconductor Corporation |
111 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
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MUR360SB R5GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
972 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A | |
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HER208G A0GDIODE GEN PURP 1KV 2A DO204AC Taiwan Semiconductor Corporation |
977 | - |
RFQ |
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Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
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MUR320SBHR5GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
180 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | |
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SK315B R5GDIODE SCHOTTKY 150V 3A DO214AA Taiwan Semiconductor Corporation |
851 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
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HS3M R7GDIODE GEN PURP 1KV 3A DO214AB Taiwan Semiconductor Corporation |
683 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
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TST20U45C C0GDIODE SCHOTTKY 45V 10A TO220AB Taiwan Semiconductor Corporation |
980 | - |
RFQ |
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Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 530 mV @ 10 A | |
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TST20U60C C0GDIODE SCHOTTKY 60V 10A TO220AB Taiwan Semiconductor Corporation |
932 | - |
RFQ |
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Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 60 V | 60 V | 10A | -55°C ~ 150°C | 630 mV @ 10 A |