फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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MUR860 C0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
230 | - |
RFQ |
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Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 175°C | 1.7 V @ 8 A | |
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S1JLW RVGDIODE GEN PURP 600V 1A SOD123W Taiwan Semiconductor Corporation |
102 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
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TSD3GHV7G3A 400V ESD CAPABILITY RECTIFIER Taiwan Semiconductor Corporation |
4,540 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | - |
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S5Q M3G5A, 1200V, STANDARD RECOVERY REC Taiwan Semiconductor Corporation |
750 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 27pF @ 4V, 1MHz | - | 10 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 150°C | 1.15 V @ 5 A | ||
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HS3BB R5GDIODE GEN PURP 100V 3A DO214AA Taiwan Semiconductor Corporation |
528 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
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SS16LSHRVGDIODE SCHOTTKY 60V 1A SOD123HE Taiwan Semiconductor Corporation |
285 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 400 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
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SF38G A0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
253 | - |
RFQ |
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Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
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HS3DB R5GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
247 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
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MUR420 A0GDIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation |
213 | - |
RFQ |
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Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 175°C | 890 mV @ 4 A | |
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HS2MA R3GDIODE GEN PURP 1KV 1.5A DO214AC Taiwan Semiconductor Corporation |
994 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1.5 A | |
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HS5A R7GDIODE GEN PURP 50V 5A DO214AB Taiwan Semiconductor Corporation |
830 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1 V @ 5 A | |
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S3GB R5GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
795 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
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HS5J R7GDIODE GEN PURP 600V 5A DO214AB Taiwan Semiconductor Corporation |
624 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.7 V @ 5 A | |
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SK54C V7GDIODE SCHOTTKY 5A 40V DO-214AB Taiwan Semiconductor Corporation |
570 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | |
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S3MB R5GDIODE GEN PURP 1KV 3A DO214AA Taiwan Semiconductor Corporation |
325 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
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S8KC V7GDIODE GEN PURP 800V 8A DO214AB Taiwan Semiconductor Corporation |
297 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A | |
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SS13L RVGDIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation |
427 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
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SS310 V7GDIODE SCHOTTKY 3A 100V DO-214AB Taiwan Semiconductor Corporation |
3,353 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
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TST40L120CW C0GDIODE SCHOTTKY 120V 20A TO220AB Taiwan Semiconductor Corporation |
1,987 | - |
RFQ |
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Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 120 V | 120 V | 20A | -55°C ~ 150°C | 800 mV @ 20 A | |
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S1GMHRSGDIODE GEN PURP 400V 1A MICRO SMA Taiwan Semiconductor Corporation |
130 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 4V, 1MHz | 780 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |