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ट्रांजिस्टर - FETs, MOSFETs - सिंगल

फोटो: निर्माता भाग संख्या उपलब्धता मूल्य मात्रा डेटाशीत Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TW140N120C,S1F

TW140N120C,S1F

G3 1200V SIC-MOSFET TO-247 140M

Toshiba Semiconductor and Storage 		105 -

RFQ

TW140N120C,S1F

डेटाशीत

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 20A (Tc) 18V 182mOhm @ 10A, 18V 5V @ 1mA 24 nC @ 18 V +25V, -10V 691 pF @ 800 V - 107W (Tc) 175°C Through Hole
TW083N65C,S1F

TW083N65C,S1F

G3 650V SIC-MOSFET TO-247 83MOH

Toshiba Semiconductor and Storage 		175 -

RFQ

TW083N65C,S1F

डेटाशीत

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 30A (Tc) 18V 113mOhm @ 15A, 18V 5V @ 600µA 28 nC @ 18 V +25V, -10V 873 pF @ 400 V - 111W (Tc) 175°C Through Hole
TW060N120C,S1F

TW060N120C,S1F

G3 1200V SIC-MOSFET TO-247 60MO

Toshiba Semiconductor and Storage 		165 -

RFQ

TW060N120C,S1F

डेटाशीत

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 36A (Tc) 18V 78mOhm @ 18A, 18V 5V @ 4.2mA 46 nC @ 18 V +25V, -10V 1530 pF @ 800 V - 170W (Tc) 175°C Through Hole
TW027N65C,S1F

TW027N65C,S1F

G3 650V SIC-MOSFET TO-247 27MOH

Toshiba Semiconductor and Storage 		180 -

RFQ

TW027N65C,S1F

डेटाशीत

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 58A (Tc) 18V 37mOhm @ 29A, 18V 5V @ 3mA 65 nC @ 18 V +25V, -10V 2288 pF @ 400 V - 156W (Tc) 175°C Through Hole
TW045N120C,S1F

TW045N120C,S1F

G3 1200V SIC-MOSFET TO-247 45MO

Toshiba Semiconductor and Storage 		150 -

RFQ

TW045N120C,S1F

डेटाशीत

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 40A (Tc) 18V 59mOhm @ 20A, 18V 5V @ 6.7mA 57 nC @ 18 V +25V, -10V 1969 pF @ 800 V - 182W (Tc) 175°C Through Hole
TW030N120C,S1F

TW030N120C,S1F

G3 1200V SIC-MOSFET TO-247 30MO

Toshiba Semiconductor and Storage 		175 -

RFQ

TW030N120C,S1F

डेटाशीत

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 60A (Tc) 18V 40mOhm @ 30A, 18V 5V @ 13mA 82 nC @ 18 V +25V, -10V 2925 pF @ 800 V - 249W (Tc) 175°C Through Hole
TW015N65C,S1F

TW015N65C,S1F

G3 650V SIC-MOSFET TO-247 15MOH

Toshiba Semiconductor and Storage 		165 -

RFQ

TW015N65C,S1F

डेटाशीत

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 100A (Tc) 18V 21mOhm @ 50A, 18V 5V @ 11.7mA 128 nC @ 18 V +25V, -10V 4850 pF @ 400 V - 342W (Tc) 175°C Through Hole
TW015N120C,S1F

TW015N120C,S1F

G3 1200V SIC-MOSFET TO-247 15MO

Toshiba Semiconductor and Storage 		160 -

RFQ

TW015N120C,S1F

डेटाशीत

 Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 100A (Tc) 18V 20mOhm @ 50A, 18V 5V @ 11.7mA 158 nC @ 18 V +25V, -10V 6000 pF @ 800 V - 431W (Tc) 175°C Through Hole
TK11A50D(STA4,Q,M)

TK11A50D(STA4,Q,M)

MOSFET N-CH 500V 11A TO220SIS

Toshiba Semiconductor and Storage 		3,195 -

RFQ

TK11A50D(STA4,Q,M)

डेटाशीत

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Ta) 10V 600mOhm @ 5.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
2SK1828TE85LF

2SK1828TE85LF

MOSFET N-CH 20V 50MA SC59

Toshiba Semiconductor and Storage 		12,026 -

RFQ

2SK1828TE85LF

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50mA (Ta) 2.5V 40Ohm @ 10mA, 2.5V 1.5V @ 100µA - 10V 5.5 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount
SSM6K208FE,LF

SSM6K208FE,LF

MOSFET N-CH 30V 1.9A ES6

Toshiba Semiconductor and Storage 		7,940 -

RFQ

SSM6K208FE,LF

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 1.8V, 4V 133mOhm @ 1A, 4V 1V @ 1mA 1.9 nC @ 4 V ±12V 123 pF @ 15 V - 500mW (Ta) 150°C Surface Mount
SSM3K7002CFU,LF

SSM3K7002CFU,LF

MOSFET N-CH 60V 170MA USM

Toshiba Semiconductor and Storage 		2,462 -

RFQ

SSM3K7002CFU,LF

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 4.5V, 10V 3.9Ohm @ 100mA, 10V 2.1V @ 250µA 0.35 nC @ 4.5 V ±20V 17 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3J15F,LF

SSM3J15F,LF

MOSFET P-CH 30V 100MA S-MINI

Toshiba Semiconductor and Storage 		2,369 -

RFQ

SSM3J15F,LF

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 12Ohm @ 10mA, 4V 1.7V @ 100µA - ±20V 9.1 pF @ 3 V - 200mW (Ta) 150°C Surface Mount
SSM3J35AMFV,L3F

SSM3J35AMFV,L3F

MOSFET P-CH 20V 250MA VESM

Toshiba Semiconductor and Storage 		11,424 -

RFQ

SSM3J35AMFV,L3F

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 20 V 250mA (Ta) 1.2V, 4.5V 1.4Ohm @ 150mA, 4.5V 1V @ 100µA - ±10V 42 pF @ 10 V - 150mW (Ta) 150°C Surface Mount
SSM3J35AFS,LF

SSM3J35AFS,LF

MOSFET P-CH 20V 250MA SSM

Toshiba Semiconductor and Storage 		5,913 -

RFQ

SSM3J35AFS,LF

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 20 V 250mA (Ta) 1.2V, 4.5V 1.4Ohm @ 150mA, 4.5V 1V @ 100µA - ±10V 42 pF @ 10 V - 150mW (Ta) 150°C Surface Mount
TK12A50W,S5X

TK12A50W,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage 		3,936 -

RFQ

TK12A50W,S5X

डेटाशीत

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C Through Hole
TK7A65D(STA4,Q,M)

TK7A65D(STA4,Q,M)

MOSFET N-CH 650V 7A TO220SIS

Toshiba Semiconductor and Storage 		3,060 -

RFQ

TK7A65D(STA4,Q,M)

डेटाशीत

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 980mOhm @ 3.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK9A65W,S5X

TK9A65W,S5X

MOSFET N-CH 650V 9.3A TO220SIS

Toshiba Semiconductor and Storage 		2,368 -

RFQ

TK9A65W,S5X

डेटाशीत

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 9.3A (Ta) 10V 500mOhm @ 4.6A, 10V 3.5V @ 350µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
SSM3K44FS,LF

SSM3K44FS,LF

MOSFET N-CH 30V 100MA SSM

Toshiba Semiconductor and Storage 		2,604 -

RFQ

SSM3K44FS,LF

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 8.5 pF @ 3 V - 150mW (Ta) 150°C Surface Mount
SSM3K72CTC,L3F

SSM3K72CTC,L3F

MOSFET N-CH 60V 150MA CST3C

Toshiba Semiconductor and Storage 		9,780 -

RFQ

SSM3K72CTC,L3F

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 150mA (Ta) 4.5V, 10V 3.9Ohm @ 100mA, 10V 2.1V @ 250µA 0.35 nC @ 4.5 V ±20V 17 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
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