फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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TPH2R805PL,LQPB-F POWER MOSFET TRANSISTOR SOP Toshiba Semiconductor and Storage |
3,120 | - |
RFQ |
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Tape & Reel (TR) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2.4V @ 500µA | 73 nC @ 10 V | ±20V | 5175 pF @ 22.5 V | - | 830mW (Ta), 116W (Tc) | 175°C | Surface Mount |
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SSM5H08TU,LFMOSFET N-CH 20V 1.5A UFV Toshiba Semiconductor and Storage |
5,971 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4V | 160mOhm @ 750mA, 4V | 1.1V @ 100µA | - | ±12V | 125 pF @ 10 V | Schottky Diode (Isolated) | 500mW (Ta) | 150°C | Surface Mount |
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TJ80S04M3L(T6L1,NQMOSFET P-CH 40V 80A DPAK Toshiba Semiconductor and Storage |
2,592 | - |
RFQ |
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Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Ta) | 6V, 10V | 5.2mOhm @ 40A, 10V | 3V @ 1mA | 158 nC @ 10 V | +10V, -20V | 7770 pF @ 10 V | - | 100W (Tc) | 175°C (TJ) | Surface Mount |
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TJ8S06M3L(T6L1,NQ)MOSFET P-CH 60V 8A DPAK Toshiba Semiconductor and Storage |
2,986 | - |
RFQ |
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Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Ta) | 6V, 10V | 104mOhm @ 4A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 890 pF @ 10 V | - | 27W (Tc) | 175°C (TJ) | Surface Mount |
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TK8S06K3L(T6L1,NQ)MOSFET N-CH 60V 8A DPAK Toshiba Semiconductor and Storage |
3,154 | - |
RFQ |
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Tape & Reel (TR) | U-MOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Ta) | 6V, 10V | 54mOhm @ 4A, 10V | 3V @ 1mA | 10 nC @ 10 V | ±20V | 400 pF @ 10 V | - | 25W (Tc) | 175°C (TJ) | Surface Mount |
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TPH3R506PL,LQMOSFET N-CH 60V 94A 8SOP Toshiba Semiconductor and Storage |
2,589 | - |
RFQ |
Tape & Reel (TR) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 94A (Tc) | 4.5V, 10V | 3.5mOhm @ 47A, 10V | 2.5V @ 500µA | 55 nC @ 10 V | ±20V | 4420 pF @ 30 V | - | 830mW (Ta), 116W (Tc) | 175°C | Surface Mount | |
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TK17V65W,LQX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
7,475 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 210mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 156W (Tc) | 150°C | Surface Mount |
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TK3P50D,RQ(SMOSFET N-CH 500V 3A DPAK Toshiba Semiconductor and Storage |
3,900 | - |
RFQ |
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Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3A (Ta) | 10V | 3Ohm @ 1.5A, 10V | 4.4V @ 1mA | 7 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | Surface Mount |
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TK28V65W,LQX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
4,960 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 120mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 240W (Tc) | 150°C | Surface Mount |
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TK28V65W5,LQX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
4,980 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 140mOhm @ 13.8A, 10V | 4.5V @ 1.6mA | 90 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 240W (Tc) | 150°C | Surface Mount |
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TK22A65X,S5XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
188 | - |
RFQ |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Ta) | 10V | 150mOhm @ 11A, 10V | 3.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
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TK3P80E,RQPB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage |
3,224 | - |
RFQ |
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Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Ta) | 10V | 4.9Ohm @ 1.5A, 10V | 4V @ 300µA | 12 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 80W (Tc) | 150°C | Surface Mount |
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TPC8133,LQ(SMOSFET P-CH 40V 9A 8SOP Toshiba Semiconductor and Storage |
3,563 | - |
RFQ |
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Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 9A (Ta) | 4.5V, 10V | 15mOhm @ 4.5A, 10V | 2V @ 500µA | 64 nC @ 10 V | +20V, -25V | 2900 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
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TK22A65X5,S5XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
178 | - |
RFQ |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Ta) | 10V | 160mOhm @ 11A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
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TJ10S04M3L(T6L1,NQMOSFET P-CH 40V 10A DPAK Toshiba Semiconductor and Storage |
2,501 | - |
RFQ |
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Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 6V, 10V | 44mOhm @ 5A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 930 pF @ 10 V | - | 27W (Tc) | 175°C (TJ) | Surface Mount |
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TJ15S06M3L(T6L1,NQMOSFET P-CH 60V 15A DPAK Toshiba Semiconductor and Storage |
3,931 | - |
RFQ |
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Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta) | 6V, 10V | 50mOhm @ 7.5A, 10V | 3V @ 1mA | 36 nC @ 10 V | +10V, -20V | 1770 pF @ 10 V | - | 41W (Tc) | 175°C (TJ) | Surface Mount |
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TJ20S04M3L(T6L1,NQMOSFET P-CH 40V 20A DPAK Toshiba Semiconductor and Storage |
2,151 | - |
RFQ |
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Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta) | 6V, 10V | 22.2mOhm @ 10A, 10V | 3V @ 1mA | 37 nC @ 10 V | +10V, -20V | 1850 pF @ 10 V | - | 41W (Tc) | 175°C (TJ) | Surface Mount |
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TK2P90E,RQPB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage |
3,484 | - |
RFQ |
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Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 2A (Ta) | 10V | 5.9Ohm @ 1A, 10V | 4V @ 200µA | 12 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 80W (Tc) | 150°C | Surface Mount |
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TPH5R60APL,L1QPB-F POWER MOSFET TRANSISTOR N-C Toshiba Semiconductor and Storage |
2,674 | - |
RFQ |
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Tape & Reel (TR) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 4.5V, 10V | 5.6mOhm @ 30A, 10V | 2.5V @ 500µA | 52 nC @ 10 V | ±20V | 4300 pF @ 50 V | - | 960mW (Ta), 132W (Tc) | 175°C | Surface Mount |
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TK12P60W,RVQ(SMOSFET N-CH 600V 11.5A DPAK Toshiba Semiconductor and Storage |
2,430 | - |
RFQ |
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Tape & Reel (TR) | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | 150°C | Surface Mount |