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ट्रांजिस्टर - FETs, MOSFETs - सिंगल
| फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7702TRPBFMOSFET P-CH 12V 8A 8TSSOP Infineon Technologies |
3,765 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 8A (Tc) | 1.8V, 4.5V | 14mOhm @ 8A, 4.5V | 1.2V @ 250µA | 81 nC @ 4.5 V | ±8V | 3470 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPP120P04P4L03AKSA1MOSFET P-CH 40V 120A TO220-3 Infineon Technologies |
3,521 | - |
RFQ |
डेटाशीत |
Tube | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 100A, 10V | 2.2V @ 340µA | 234 nC @ 10 V | ±16V | 15000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPP120P04P4L03AKSA2MOSFET P-CH 40V 120A TO220-3 Infineon Technologies |
3,971 | - |
RFQ |
डेटाशीत |
Tube | OptiMOS®-P2 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 100A, 10V | 2.2V @ 340µA | 234 nC @ 10 V | +5V, -16V | 15000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPA60R190C6XKSA1MOSFET N-CH 600V 20.2A TO220-FP Infineon Technologies |
2,807 | - |
RFQ |
डेटाशीत |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPA80R280P7XKSA1MOSFET N-CH 800V 17A TO220-3F Infineon Technologies |
2,430 | - |
RFQ |
डेटाशीत |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36 nC @ 10 V | ±20V | 1200 pF @ 500 V | Super Junction | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IPP80R280P7XKSA1MOSFET N-CH 800V 17A TO220-3 Infineon Technologies |
3,730 | - |
RFQ |
डेटाशीत |
Bulk,Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36 nC @ 10 V | ±20V | 1200 pF @ 500 V | Super Junction | 101W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFSL4010PBFMOSFET N-CH 100V 180A TO262 Infineon Technologies |
2,668 | - |
RFQ |
डेटाशीत |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215 nC @ 10 V | ±20V | 9575 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPB60R099C7ATMA1MOSFET N-CH 650V 22A TO263-3 Infineon Technologies |
3,708 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1819 pF @ 400 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IPP65R190CFDXKSA1MOSFET N-CH 650V 17.5A TO220-3 Infineon Technologies |
2,618 | - |
RFQ |
डेटाशीत |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPI045N10N3GXKSA1MOSFET N-CH 100V 100A TO262-3 Infineon Technologies |
3,396 | - |
RFQ |
डेटाशीत |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 4.5mOhm @ 100A, 10V | 3.5V @ 150µA | 117 nC @ 10 V | ±20V | 8410 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IPP50R199CPXKSA1MOSFET N-CH 550V 17A TO220-3 Infineon Technologies |
2,388 | - |
RFQ |
डेटाशीत |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 550 V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45 nC @ 10 V | ±20V | 1800 pF @ 100 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPB036N12N3GATMA1MOSFET N-CH 120V 180A TO263-7 Infineon Technologies |
3,750 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 180A (Tc) | 10V | 3.6mOhm @ 100A, 10V | 4V @ 270µA | 211 nC @ 10 V | ±20V | 13800 pF @ 60 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPL60R085P7AUMA1MOSFET N-CH 650V 39A 4VSON Infineon Technologies |
3,587 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 39A (Tc) | 10V | 85mOhm @ 11.8A, 10V | 4V @ 590µA | 51 nC @ 10 V | ±20V | 2180 pF @ 400 V | - | 154W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
IPW80R280P7XKSA1MOSFET N-CH 800V 17A TO247-3 Infineon Technologies |
3,767 | - |
RFQ |
डेटाशीत |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36 nC @ 10 V | ±20V | 1200 pF @ 500 V | Super Junction | 101W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPB60R125CPATMA1MOSFET N-CH 600V 25A TO263-3 Infineon Technologies |
3,114 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Bulk | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70 nC @ 10 V | ±20V | 2500 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFB4332PBFMOSFET N-CH 250V 60A TO220AB Infineon Technologies |
2,276 | - |
RFQ |
डेटाशीत |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 60A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±30V | 5860 pF @ 25 V | - | 390W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
IPW60R190C6FKSA1MOSFET N-CH 600V 20.2A TO247-3 Infineon Technologies |
3,306 | - |
RFQ |
डेटाशीत |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IPA60R160C6XKSA1MOSFET N-CH 600V 23.8A TO220-FP Infineon Technologies |
2,975 | - |
RFQ |
डेटाशीत |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75 nC @ 10 V | ±20V | 1660 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IPP60R160C6XKSA1MOSFET N-CH 600V 23.8A TO220-3 Infineon Technologies |
2,959 | - |
RFQ |
डेटाशीत |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75 nC @ 10 V | ±20V | 1660 pF @ 100 V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IPB64N25S320ATMA1MOSFET N-CH 250V 64A TO263-3 Infineon Technologies |
3,166 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 20mOhm @ 64A, 10V | 4V @ 270µA | 89 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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