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ट्रांजिस्टर - FETs, MOSFETs - ऐरे
| फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SJ653-CB11-ONFOR 60V MOTOR DRIVERS onsemi |
2,370 | - |
RFQ |
डेटाशीत |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
UC2705D/81278BUFFER/INVERTER BASED MOSFET DRI Unitrode |
3,865 | - |
RFQ |
डेटाशीत |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
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SK3065RF MIXER AND IF STAGES Harris Corporation |
295 | - |
RFQ |
डेटाशीत |
Bulk | - | Active | 2 N-Channel (Dual) | Standard | 20V | 50mA | - | - | - | - | 330mW | - | Through Hole |
|
FS50KM-2#E52DISCRETE / POWER MOSFET Renesas Electronics America Inc |
733 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
FS50KM-06-AX#E51DISCRETE / POWER MOSFET Renesas Electronics America Inc |
522 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
RJK03C0DPA-WS#J5AN-CHANNEL POWER SWITCHING Renesas Electronics America Inc |
2,212 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
FDI9406110A, 40V, N CHANNEL, MOSFET, T Fairchild Semiconductor |
3,465 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
2SK2596BXTL-EULTRA HIGH FREQ BAND, N-CHANNEL Renesas Electronics America Inc |
2,689 | - |
RFQ |
डेटाशीत |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRFHE4250DTRPBFHEXFET POWER MOSFET International Rectifier |
3,052 | - |
RFQ |
डेटाशीत |
Bulk | HEXFET® | Active | 2 N-Channel (Dual) | Standard | 25V | 86A (Tc), 303A (Tc) | 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V | 2.1V @ 35µA, 2.1V @ 100µA | 20nC @ 4.5V, 53nC @ 4.5V | 1735pF @ 13V, 4765pF @ 13V | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9640S249711A, 200V, 0.500 OHM, P-CHANNEL Harris Corporation |
250 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
2SK1626-E5A, 450V, N-CHANNEL MOSFET Renesas Electronics America Inc |
709 | - |
RFQ |
डेटाशीत |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
NP80N03MDE-S18-AY80A, 30V, 0.011OHM, N-CHANNEL NEC Corporation |
700 | - |
RFQ |
डेटाशीत |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
2SK2059L-E3A, 600V, N-CHANNEL MOSFET Renesas Electronics America Inc |
665 | - |
RFQ |
डेटाशीत |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
FX30KMJ-2#B00HIGH SPEED SWITCHING P CHANNEL Renesas Electronics America Inc |
215 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
FDB3652SB820591-ELEMENT, N-CHANNEL Fairchild Semiconductor |
500 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
FDP047N08-F10164A, 75V, N-CHANNEL, MOSFET Fairchild Semiconductor |
432 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
FS50KM-2-J2#E52DISCRETE / POWER MOSFET Renesas Electronics America Inc |
884 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
SPA20N60CFDPOWER FIELD-EFFECT TRANSISTOR, 2 Infineon Technologies |
111 | - |
RFQ |
डेटाशीत |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
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FS70UMJ-06F70A, 60V, N-CHANNEL MOSFET NEC Corporation |
288 | - |
RFQ |
डेटाशीत |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
2SJ413-TH-ONP-CHANNEL SILICON MOSFET onsemi |
300 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
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