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ट्रांजिस्टर - FETs, MOSFETs - ऐरे

निर्माता भाग संख्या	उपलब्धता	मूल्य	मात्रा	डेटाशीत	Packaging	Series	ProductStatus	FETType	FETFeature	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	InputCapacitance(Ciss)(Max)@Vds	Power-Max	OperatingTemperature	MountingType
ALD110914PAL MOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc.	3,708	-	RFQ	डेटाशीत	Tube	EPAD®	Active	2 N-Channel (Dual) Matched Pair	Standard	10.6V	12mA, 3mA	500Ohm @ 5.4V	1.42V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD1108ESCL MOSFET 4N-CH 10V 16SOIC Advanced Linear Devices Inc.	3,307	-	RFQ	डेटाशीत	Tube	EPAD®	Active	4 N-Channel, Matched Pair	Standard	10V	-	500Ohm @ 5V	1.01V @ 1µA	-	25pF @ 5V	600mW	0°C ~ 70°C (TJ)	Surface Mount
ALD114804SCL MOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc.	3,410	-	RFQ	डेटाशीत	Tube	EPAD®	Active	4 N-Channel, Matched Pair	Depletion Mode	10.6V	12mA, 3mA	500Ohm @ 3.6V	360mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD210808PCL MOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc.	3,127	-	RFQ	डेटाशीत	Tube	EPAD®, Zero Threshold™	Active	4 N-Channel, Matched Pair	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD210808SCL MOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc.	3,408	-	RFQ	डेटाशीत	Tube	EPAD®, Zero Threshold™	Active	4 N-Channel, Matched Pair	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD110802PCL MOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc.	3,660	-	RFQ	डेटाशीत	Tube	EPAD®	Active	4 N-Channel, Matched Pair	Standard	10.6V	-	500Ohm @ 4.2V	220mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD110802SCL MOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc.	2,073	-	RFQ	डेटाशीत	Tube	EPAD®	Active	4 N-Channel, Matched Pair	Standard	10.6V	-	500Ohm @ 4.2V	220mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD110804PCL MOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc.	3,386	-	RFQ	डेटाशीत	Tube	EPAD®	Active	4 N-Channel, Matched Pair	Standard	10.6V	12mA, 3mA	500Ohm @ 4.4V	420mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD110804SCL MOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc.	2,710	-	RFQ	डेटाशीत	Tube	EPAD®	Active	4 N-Channel, Matched Pair	Standard	10.6V	12mA, 3mA	500Ohm @ 4.4V	420mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD110814PCL MOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc.	3,392	-	RFQ	डेटाशीत	Tube	EPAD®	Active	4 N-Channel, Matched Pair	Standard	10.6V	12mA, 3mA	500Ohm @ 5.4V	1.42V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD114813SCL MOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc.	2,828	-	RFQ	डेटाशीत	Tube	EPAD®	Active	4 N-Channel, Matched Pair	Depletion Mode	10.6V	12mA, 3mA	500Ohm @ 2.7V	1.26V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD110808PCL MOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc.	3,968	-	RFQ	डेटाशीत	Tube	EPAD®	Active	4 N-Channel, Matched Pair	Standard	10.6V	12mA, 3mA	500Ohm @ 4.8V	820mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD114935PAL MOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc.	3,353	-	RFQ	डेटाशीत	Tube	EPAD®	Active	2 N-Channel (Dual) Matched Pair	Depletion Mode	10.6V	12mA, 3mA	540Ohm @ 0V	3.45V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD310700SCL MOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc.	2,862	-	RFQ	डेटाशीत	Tube	EPAD®, Zero Threshold™	Active	4 P-Channel, Matched Pair	Standard	8V	-	-	20mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Surface Mount
ALD310702SCL MOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc.	2,249	-	RFQ	डेटाशीत	Tube	EPAD®, Zero Threshold™	Active	4 P-Channel, Matched Pair	Standard	8V	-	-	180mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Surface Mount
ALD310704SCL MOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc.	2,662	-	RFQ	डेटाशीत	Tube	EPAD®, Zero Threshold™	Active	4 P-Channel, Matched Pair	Standard	8V	-	-	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Surface Mount
ALD114904APAL MOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc.	2,819	-	RFQ	डेटाशीत	Tube	EPAD®	Active	2 N-Channel (Dual) Matched Pair	Depletion Mode	10.6V	12mA, 3mA	500Ohm @ 3.6V	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD114904ASAL MOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc.	2,412	-	RFQ	डेटाशीत	Tube	EPAD®	Active	2 N-Channel (Dual) Matched Pair	Depletion Mode	10.6V	12mA, 3mA	500Ohm @ 3.6V	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD212900ASAL MOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc.	3,602	-	RFQ	डेटाशीत	Tube	EPAD®, Zero Threshold™	Active	2 N-Channel (Dual) Matched Pair	Logic Level Gate	10.6V	80mA	14Ohm	10mV @ 20µA	-	30pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD210800PCL MOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc.	2,775	-	RFQ	डेटाशीत	Tube	EPAD®, Zero Threshold™	Active	4 N-Channel, Matched Pair	Logic Level Gate	10.6V	80mA	25Ohm	20mV @ 10µA	-	15pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole